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Preparation Cu （In, Ga） Se2 Thin Film by Sputtering Alloy Target and Its Properties Study

Author: ShiJianHua
Tutor: HuangSuMei
School: East China Normal University
Course: Nano Physics
Keywords: A thin-film solar cell CIGS Magnetron sputtering CdS
CLC: TM914.4
Type: Master's thesis
Year: 2011
Downloads: 210
Quote: 0
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Abstract


Copper indium gallium selenide ( CIGS ) thin film solar cells is recognized as the most promising next-generation solar cells, according to the latest reports , the laboratory area CIGS thin film solar cell photoelectric conversion efficiency exceeded 20% , the battery module efficiencies of up to 16 % . CIGS thin film solar cell has a long life, stable performance , low production cost , strong radiation resistance , excellent low light response characteristics and high photoelectric conversion efficiency , etc. However , due to its relatively complex preparation process and device structure, its industrial production is facing a severe bottleneck . According to incomplete statistics, in 2010 the world's total installed capacity of photovoltaic power generation capacity of about 25 gigawatts ( GW ) , CIGS thin film solar cell market share of less than 5% . Therefore , further research and development of new low-cost and easy production of large area CIGS thin film solar cell fabrication process technology of great significance. In this paper, magnetron sputtering technology to prepare light-absorbing layer of CIGS thin-film materials , the quaternary alloy CIGS target , System sputtering power , pressure , target composition and annealing process on the performance of CIGS thin-film photovoltaic . The study found that the sputtering power 130W, the working pressure 1.3Pa when prepared with (112) preferred growth phase , smooth surface, excellent optical performance, CIGS thin film . Subsequent annealing enables the CIGS recrystallization and fully compensate for the loss of Se in the sputtering process element , so that the CIGS thin film having a better crystallinity, and the proportion of the chemical elements , and the photoelectric characteristics . In addition, the article System of thin film material of the buffer layer of cadmium sulfide (CdS) chemical bath deposition (CBD) preparation process . Can be prepared by adjusting the concentration of ammonia and other reaction conditions suitable material of a buffer layer of CdS thin film solar cell applications . In order to further study the nature of the CIGS thin film prepared structure typical glass (substrate ) / Mo / CIGS / CdS / i - ZnO / Al - ZnO / Ag CIGS thin film solar cell device . Room temperature 25 ° C , AM1.5 test conditions , area for of 0.4cm2 battery unit photoelectric conversion efficiency of about 8% , and provide some basic theoretical guidance and technical reference for the next stage of development for our CIGS thin film solar cells .

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CLC: > Industrial Technology > Electrotechnical > Independent power supply technology (direct power) > Photocell > Solar cells
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