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The Electronic Transport Behavior of Bi and Pb Nanostructures in the Melting Process

Author: FangBingCheng
Tutor: YuanZhiHao
School: Tianjin University of Technology
Course: Materials Physics and Chemistry
Keywords: anodic aluminum oxide template metal nanowires pulse electrochemical deposition melting temperature electronic transport property
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 26
Quote: 1
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Abstract


It is well known that the electronic devices will generate heat during their service. Because the melting point of metal nanowires is lower than the counterpart of bulk materials, the heat could cause nanowires melt. Therefore, it is significant for the design of nanodevices to study the electronic transport properties of one-dimensional metal nanomaterials in the melting process. In this thesis, taking advantage of stable performance of anodized aluminum oxide (AAO) template in high temperature and its confining effect of one-dimensional nanoporous structure, we explore the electronic transport property of low-melting-point metal nanostructures in the melting process and reveal new physical phenomena in this condition, which can accumulate data and offer idea for constructing nanoelectronic devices. The main contents of this thesis are as follows:Firstly, we select 0.3mol/L oxalic acid as the electrolyte and two-step oxidation process to prepare the linear and Y type nano-pore AAO templates. Based these templates, the linear and Y type Bi、Pb nanowire arrays are successfully synthesized using pulse electrochemical deposition technique, and the morphology and structure of Bi and Pb nanostructures are characterized.Secondly, we employ Differential Scanning Calorimeters (DSC) to measure the melting temperature of various kinds nanostructures, and devise corresponding heating process. Under the heating condition, the electronic transport property of Bi and Pb nanowire arrays are measured by SourceMeter instrument. The experiment results show that the resistance of linear and Y type Bi nanowire arrays increase with the temperature increasing before the melting of the nanowires, which exhibits the positive temperature coefficient of resistance. While, the Bi nanowire arrays exhibit negative temperature coefficient of resistance after the melting of the nanowires. The resistance of linear Pb nanowire arrays constantly increases with the temperature rising above the melt point.Finally, we measure the electronic transport property of recrystallization Bi nanowires from the room temperature to high temperature for many times by SourceMeter instrument. We find the resistance variation of recrystallization Bi nanowire array is consistent with the unmelted sample, but the transition point of resistance-temperature coefficient is lower than that for unmelted Bi nanowire arrays.

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