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SOC application NiZn ferrite thin films

Author: LiJinLong
Tutor: YuZhong
School: University of Electronic Science and Technology
Course: Electronic information materials and components
Keywords: RF magnetron sputtering NiZn ferrite thin film grain growth kinetics ZnFe2O4 buffer layer oriented growth
CLC: TM277
Type: Master's thesis
Year: 2011
Downloads: 43
Quote: 0
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Abstract


The devices based on ferromagnetic thin film has been a key of a Monolithic Integrated Circuits （MICs） technology to SOC （System On Chip）, the NiZn ferrite thin film used in them is the support material whch determines their performance, the current research focuses on improving performance and optimization of NiZn ferrite film preparation process.This paper addresses the RF magnetron sputtering as the main method, NiZn ferrite film as the main object, the content and conclusions include:（1）The cations occupying of NixZn1-xFe2O4 ferrites has been calculated by using of X-ray diffraction method. The results show that, a little Ni2+ occupies B site, in contrast to the M?ssbauer spectrum of Ni0.6Zn0.4Fe2O4, the calculation errors of Fe3+ in A and B sites are 6.5% and 2.0%, respectively. The calculated and measured values obtain a good fit.（2）The effect of different type of substrates for NiZn ferrite thin films magnetic properties and orientated growth has been investigated. MgAl2O4 substrate has strong induction for NiZn thin film because of the same crystal structure. Film on MgAl2O4 substrate can get higher saturation magnetization because of the lower lattice mismatch between them, the coercivity is mainly depended on the thermal stress caused by differences in thermal expansion coefficient.（3）The effect of annealing process on the magnetic property, phase structure and microstructure were investigated. The most optimal annealing process is annealing temperature of 800℃with holding time of 120min. The dependence between the intrinsic stress and thermal stress of film is investigated by using stress model of coercivity. In combination with the Tradition Phenomenological Rate Equation （TPRE）, the grain growth kinetics of Ni0.5Zn0.5Fe2O4 ferrite films annealed at 800℃was investigated. The mass-transport mechanism is different from that of the bulk,powder or nanoparticles. The activation energy of grain growth are 22.75, 42.52, 56.32 and 85.54KJ/mol, respectively, which are much smaller than that of the powder system.（4）The preparation of highly orientated NiZn ferrite thin film by using ZnFe2O4 buffer layer has been investigated. Firstly, single {111} planes orientated ZnFe2O4 thin films have been deposited on Si（100）, Si（111） and SiO2（500nm）/Si（111） substrates with low RF magnetron sputtering power 80W. Then the Ni0.5Zn0.5Fe2O4/ZnFe2O4/Si（111） films were deposited with different sputtering power from 60W to 160W, for the inducing effect of ZnFe2O4 ferrite thin film, we have get highly {111} planes orientated NiZn ferrite thin film.

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CLC: > Industrial Technology > Electrotechnical > Electrical materials > Magnetic materials,ferrite > Ferrite,oxide magnetic materials
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