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Single- target magnetron sputtering step preparation of CIGS thin film

Author: MeiDi
Tutor: LiJingZe
School: University of Electronic Science and Technology
Course: Materials Science and Engineering
Keywords: CIGS Single - target magnetron sputtering Four yuan CIGS compound target Thin film solar cell CIGS micron column
CLC: TM914.4
Type: Master's thesis
Year: 2011
Downloads: 183
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Abstract


Copper indium gallium selenide (CIGS) thin film solar cells has a strong anti-radiation , high photoelectric conversion efficiency , performance and stability , is the most promising development in one of the solar cells . CIGS light absorbing layer film was prepared by multi - source co-evaporation method and a sputtering - selenide method . Prepared by evaporation of the photoelectric conversion efficiency of the CIGS device has reached 20.3%, and the maximum conversion efficiency of the CIGS thin film solar cell record . However , the co-evaporation method process is difficult, yield is low, a low utilization rate of raw materials . Sputtering - selenide process not only Omo prepared CIGS thin film , high utilization of raw materials , and the compactness of the precursor film sputtering , good compositional uniformity , adjustable elements stoichiometry . The drawback is that the selenide processes with long , low yield . In view of the CIGS light absorbing layer thin film preparation process advantages and disadvantages , the magnetron sputtering CIGS quaternary compounds target of this thesis innovative , and eliminating the need selenide or annealing step preparation of CIGS thin film . Systematic exploration studies , the CIGS thin film preparation process , the main contents are as follows : (1) back electrode Mo layer on the CIGS layer morphology and crystallinity . By observing the Mo layer deposited under different conditions the CIGS layer surface morphology, the impact of film crystallinity , and ultimately determine the best of the Mo layer sputtering parameters . (2) as a starting point , the four main parameters of the magnetron sputtering substrate temperature , sputtering pressure , target-substrate distance and sputtering power , detailed study of the sputtering parameters on crystalline CIGS thin film surface morphology, film density and thin film growth mechanism . By improving the sputtering parameters , the final preparation of a crystalline , smooth and dense CIGS thin film . ( 3 ) first observed to CIGS micron column . CIGS thin film deposited under a low sputtering power, a high sputtering pressure , high temperature conditions of the substrate will appear in diameter from a few hundred nanometers to several microns micron columns . CIGS micron column morphology observed by SEM , and its growth mechanism . (4) The preparation process of the CIGS thin film solar cell , and without cadmium CIGS thin film solar cell was prepared . Comments cell preparation process according to the output curve for the preparation of a CIGS thin film solar cell output characteristic measurement .

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CLC: > Industrial Technology > Electrotechnical > Independent power supply technology (direct power) > Photocell > Solar cells
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