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HFCVD diamond film / copper composite material and bonding properties of the growth process

Author: TianMengKun
Tutor: YuZhiMing
School: Central South University
Course: Materials Science
Keywords: Diamond films Copper Binding properties Transition
CLC: TB43
Type: Master's thesis
Year: 2011
Downloads: 65
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Abstract


With contemporary electronic products towards faster, smaller, higher power in the direction of the substrate material to improve the thermal conductivity of growing concern . Synthetic diamond technology matures make diamond products used in the electronics industry has gradually become possible. This use of hot filament chemical vapor deposition (HFCVD) system to CH4 and H2 as the reaction gas , the copper is deposited on the diamond films . Field emission scanning electron microscopy (FESEM), Raman spectroscopy (Raman), Vickers hardness were detected and analyzed to study the process parameters of diamond film growth and transition layer / substrate binding properties. Concluded as follows : 1. Directly on the copper deposition of diamond nucleation rate is small , to take the diamond particles / acetone with increasing surface roughness can significantly increase the nucleation rate ; 2 in the hot-wire a distance of 8-12mm, 1-3% concentration of methane gas at a pressure of 2-3.5kPa, the deposition time is 6h-10h, substrate temperature of 800 ℃ -700 ℃ within the parameters of the highest quality diamond film deposited , small changes in composition and morphology . When the hot wire is too large (14mm) or too small (7mm), the methane concentration is too high (5% ) , the gas pressure is too large (4.5kPa), the deposition time is shorter (2h), high (900 ℃) and low (650 ℃) under a temperature condition of poor quality diamond film . 3 In this paper, the choice of experimental parameters, the diamond film on copper binding force of poor performance. Ti thin transition layer can effectively improve the bonding strength with the substrate , and W, Nb buffer layer with the worst performance . Ti buffer layer compared to other non- diamond buffer layer to make more. Ni particle size is much larger than the buffer layer on the diamond transition Nb , Ti transition layer and copper substrate .

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CLC: > Industrial Technology > General industrial technology > Industrial common technology and equipment > Thin-film technology
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