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Ultra-wideband CMOS low noise amplifier design
Author: GaoYang
Tutor: XueHongXi
School: University of Electronic Science and Technology
Course: Circuits and Systems
Keywords: Gate inductance peaking Noise cancellation UWB LNA
CLC: TN722.3
Type: Master's thesis
Year: 2011
Downloads: 167
Quote: 0
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Abstract
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With the development of wireless communication technology , the traditional narrowband communication systems have been difficult to meet the need. Broadband , high-speed wireless communication is the main trend of the future development . The ultra-wideband (UWB) technology with its advantages of low-power , low-cost and high-speed rate is seen as one of the important technologies of the new generation of wireless communications . In the field of RF and microwave circuit miniaturization needs to promote the development of radio frequency integrated circuits . With the progress of technology , CMOS RF front-end implementation can be completed at the same time to meet the low-cost good performance requirements . Therefore research CMOS process - based RF broadband circuit , has important practical significance and market prospects . This paper designed a low noise amplifier ( LNA ) for UWB RF receiver . As the first stage of the receiver front end , LNA gain, noise and linearity indicators have a direct impact on the performance of the entire system . Ensure wide band have a flat gain , low noise and good matching is the focus of the design . This paper first discusses the CMOS amplifier bandwidth extension technique . On the basis of analysis of the comparison prior art , the gate inductor peaking technique . The gate inductance peaking technology is relatively conventional cascode technology , bandwidth can be extended a maximum of 2.5 times . Due to its good -of-band signal rejection and gain flatness of the LNA designed using this technology to achieve bandwidth expansion . Then mainstream CMOS LNA broadband input matching and noise cancellation technology . Combined the inductive source level degradation and parallel resistor negative feedback characteristics , and the completion of the input stage of the design , and simulation analysis of the various components of the input matching performance . While adding noise elimination circuit to reduce the noise figure of the LNA . Finally, at the completion of the circuit design of the LNA , the a passive inductance in the gate inductance peaking technique is replaced with the form of the current reuse active inductor, in order to reduce the chip area. LNA supply voltage of 1.2V, using TSMC 0.13μm RF CMOS process , complete the simulation in ADS software . Simulation results show that , in the 3.1-10.6 GHz frequency range , the small signal gain 15.1dB of fluctuating band 0.6dB, input and output reflection coefficient of less than -10dB , the entire band noise figure of 3.5- 4.1dB in 7GHz at IIP3 is -3.6dBm, the power consumption of 15mW .
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Basic electronic circuits > Amplification technology,the amplifier > Amplifier > Low-noise amplifier
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