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The Fabrication and Circuit Simulation of Real Space Transfer Transistor

Author: YanZuo
Tutor: LiangHuiLai
School: Tianjin University
Course: Microelectronics and Solid State Electronics
Keywords: Real space transfer transistor Velocity modulation transistor High electron mobility transistors Hspice circuit simulation
CLC: TN32
Type: Master's thesis
Year: 2008
Downloads: 19
Quote: 0
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Abstract


Real space transfer transistor is a novel N-type negative resistance of a semiconductor device with a high-frequency , high-speed , controlled negative resistance and other significant advantages , can greatly simplify the complexity of integrated circuits . Through the papers on a GaAs substrate by molecular beam epitaxy (MBE) technology and semiconductor device technology , successfully developed a δ - doped dual channel real space transfer transistor (Real Space Transfer Transistor - RSTT ) , test results show the device has a negative resistance device typical \This paper elaborates δ - doped dual channel real space transfer transistor design ideas , material structure design of the device , focusing on the δ-doped dual channel real space transfer transistor fabrication , and device material structural parameters and fabrication of negative resistance properties of the devices . Also elaborated on the dual channel real space transfer transistor circuit simulation Send program and design ideas , as well as the problems and future research directions for the future of such devices . The main content of this paper are: the dual-channel the device material structure the δ doping type Shuang'gou of Road real space transfer transistor is in the study of early real space transfer (RST) devices and reference velocity modulation transistor (VMT) designed and fabricated out of the basis of the working principle . In a specific device on the material structure , the design of the cap layer (Cap layer ) thickness d2 = 50nm, d2 = 30 nm of two different structure . Has produced δ-doped material epitaxy , 20Sec 33Sec the two batches of material . In device fabrication , semiconductor technology to RSTT detail . The main process including the device isolation , the metal deposition of the electrode , the source to drain electrode alloy, etc. . In the production process of device isolation and the electrode alloy rigorous monitoring , to achieve the precise control . Circuit simulation , the δ-doped single-tube dual channel real space transfer transistor a reasonable circuit model design and improved , in contrast to draw a better comparison of results with the actual measurements .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor )
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