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In this dissertation, large-scale of SiC one-dimension materials were synthesized by the Chemical Vapor Reaction （CVR） approach. A mixture of milled Si and SiO2 and CH4 were selected as starting materials. Ni（NO3）2/ethanol were employed as catalyst. The SiC nanowires （nanocables） can be obtained by a series of chemical reaction with the protection of Ar at 1250°C-1300°C and under negative pressure.In this thesis, the milling process of Si and SiO2 powder was studied systematically, which are the raw materials of synthesizing SiC one-dimensional nanomaterials. Firstly, the main impact factors were acknowledged after milling Si and SiO2 powder primarily, and high energy milling optimμm process was studied emphatically through orthogonality experiments basing on the law of milling effect. Then the as-obtained products was characterized by granularity and transmission electron microscope, finally the milling law and optimμm process were as follows: to Si, the rotation speed is 300 rpm, the milling time is 4 hours, the ratio of milling ball to powder by weight is 5:1, the blending ratio ofФ20:Ф10:Ф:Ф2 is 1:50:180:400; to SiO2, the rotation speed is 350 rpm, the milling time is 4.4 hours, the ratio of milling ball to powder by weight is 15:1, the blending ratio ofФ20:Ф10:Ф6vФ2 is 1:50:180:400.This dissertation investigates the obvious influence of synthesis temperature, ventilate ratio and ventilate time, the moral ratio of raw materials, substrates and atmosphere of the reaction room on the product of macroscopic production and microstructure. The quantity, microstructure and chemical component of the production was studied via a series of analysis such as TEM, SEM, X-Ray, SAED, EDX and IR. The results show that: 36 minutes ventilate time at 1250°C-1270°C can generate more nanowires on the graphite substrate. A rational thermodynamic explanation is given to illustrate that SiC nanowires with SiO2 wrappers were formed at 1300°C and SiC nanowires without SiO2 wrappers at 1250°C.
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