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The Study on Electrical Characteristics of Strained Si MOSFETs

Author: ZuoPengFei
Tutor: ZhangHeMing
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Strained silicon Threshold voltage Enhanced mobility
CLC: TN303
Type: Master's thesis
Year: 2009
Downloads: 119
Quote: 0
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Abstract


Strained silicon technology through the introduction of the stress in the traditional bulk silicon devices to improve mobility and to improve the performance of the device , but without the need to strain CMOS based bulk silicon technology too complex process , and thus as a cheap and efficient technology rather be more widely used . In this paper, strained silicon and strain the the silicon germanium physical characteristics and the electrical characteristics of MOS devices , to study the establishment of strain silicon surface channel MOsFET, strain the the silicon germanium surface and buried channel MOSFET structure model , the depletion layer approximation and one-dimensional Poisson equation were established threshold voltage model , the establishment of the volt-ampere characteristics , transconductance , drain guide and cut-off frequency parameters of the electrical properties of the simulation analysis using MATLAB . The application of two-dimensional device simulator MEDICI simulation studies , in order to select the appropriate parameters to optimize device performance integrated CMOS device structure parameters on the device performance . Through the simulation results prove that this new type of device performance is good , with a good prospect of application .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > Structure,the device
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