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Research on Threshold Voltage Model in Strained Si MOS Devices

Author: YinXiangKun
Tutor: LiuHongXia
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Strained silicon MOS devices Threshold voltage Dual-gate
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 89
Quote: 0
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Abstract


Strained silicon technology by introducing stress in the channel of the MOSFET device to improve the carrier mobility , so as to enhance the performance of the device , and the strained silicon technology body Si CMOS technology based , does not require too complicated processes , and thus being used as a cheap and efficient technology to be more widely used , the continuation of Moore's Law . Correction strained silicon and strained SiGe material parameters as well as the band model , established contingency 2D Poisson equation for the electric potential distribution in the the SGOI PMOS devices , solving equations by substituting the boundary conditions to obtain a more accurate model of the threshold voltage . And its simulation analysis to prove the correctness of the model using Matlab software . In order to solve the existing strain devices exist serious short-channel effects , subthreshold slope increases and other issues , this paper proposes a dual gate strained silicon SOI MOSFET structure , and design a set of manufacturing processes based on the existing CMOS process . By solving the two - dimensional Poisson equation , the dual-gate threshold voltage model of strained silicon . Followed by its simulation analysis using Matlab software , double gate well suppress short-channel effects , gate length can be shortened to 25nm strained silicon devices . The use of the establish threshold voltage model , this paper simulates the key parameters of the device (such as a gate oxide thickness of strained silicon thickness , Ge composition , etc.) impact on device performance . According to the simulation results , optimize these parameters , more reasonable value of the device parameters .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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