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Preparation, Structure and photoelectric properties of nitrogen-doped DLC films

Author: ChenHaiPing
Tutor: YangBingChu
School: Central South University
Course: Condensed Matter Physics
Keywords: Class nitrogen - doped diamond films DC magnetron sputtering Nitrogen Amorphous Optical band gap Resistance
CLC: TB383.2
Type: Master's thesis
Year: 2009
Downloads: 122
Quote: 1
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Abstract


By DC magnetron sputtering method, as the working gas of Ar and N 2 , graphite as sputtering targets, DLC films were prepared on glass substrates and nitrogen-doped DLC films. By atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectrometer (Raman), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) by means of surface morphology, composition and structure of the films were characterized and analysis. UV - visible spectrometer (UV-VIS) transmittance of nitrogen-doped films, the absorption coefficient and optical band gap changes; insulation resistance tester and amoxicillin bridge the insulation resistance of nitrogen-doped diamond-like carbon and the dielectric constant. The results show that the working gas of DLC films were successfully prepared on glass substrates and nitrogen-doped DLC films by DC magnetron sputtering, graphite target, Ar and N 2 . The incorporation of nitrogen in the film formed in the bonding mode of the CN, C = N and C ≡ N key, wherein nitrogen is mainly based on the C = N bond in the form of film. As the nitrogen flow ratio increases, the increase in nitrogen content of the film, the sp 3 / the sp 2 the proportion of first increases and then decreases, while the optical band gap first became larger decreases; nitrogen flow ratio increases also makes the insulation resistance of the film first and then decreases, the dielectric constant has been increased. We also discuss the impact of different sputtering power and substrate temperature of process parameters on the surface morphology of the film deposition rate, Raman spectroscopy, optical band gap, insulation resistance and dielectric constant. It was found that keeping the other parameters constant sputtering power will only increase the deterioration of the surface morphology of the films; deposition rate, showing a first increases then decreases with increasing sputtering power; the film insulation resistance and The optical band gap also increases and decreases, this may be because the sputtering power increases such that the nitrogen content of the film is gradually increased, when the content is less, nitrogen can stabilize and improve the film in sp 3 content; nitrogen content exceeds a certain limit, the nitrogen inhibition the sp 3 , promote the growth of the the sp 2 key state. Only to raise the temperature of the substrate, the surface of the film becomes more uniform and compact; the same time, the film deposited under higher substrate temperature Raman spectrum G peak moves to the high-frequency direction, indicating that the membrane in the sp < / sup> Multiple state content; In addition, the absorption coefficient of the thin film prepared by high substrate temperature increases, the optical band gap is smaller, the dielectric constant of the film increases, the reason is when the substrate temperature is high, more carbon atom and nitrogen atom to form CC, CN key binding is deposited on a substrate, the film the sp 2 -state content is also relatively high.

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