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A Research on the Methods to Improve the UIS Capacity for Power Mosfet Testing

Author: GuXiaoJian
Tutor: ShiGuoYong；HuangZhen
School: Shanghai Jiaotong University
Course: Software Engineering
Keywords: Power MOSFET UIS / UIL The conduction Resistance ( RDSON ) EAS
CLC: TN386
Type: Master's thesis
Year: 2008
Downloads: 128
Quote: 0
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Abstract


This paper introduces the principle and the importance of the power MOS the UIS (unclamped inductive switching) test , the actual case of a company , to explain the relationship between UIS and product quality , and tap the factors affecting the ability of UIS , and explained by the actual case the three methods to improve power MOSFET device , i.e. to improve the contact process , reduce RB to change design . Actual case two MOSFET devices A , B applied combination of these three methods , the power MOSFET UIS Capability and test pass rate has been a very large increase .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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