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Is well known , a piezoelectric material (lead zirconate titanate ) containing a large amount of lead , in the preparation and use of the process , causing environmental pollution and damage to human body . In order to protect our environment from lead pollution , the development of new lead-free piezoelectric materials to replace traditional piezoelectric material is the inevitable trend of development of piezoelectric material . Na0.5Bi0.5TiO3-K0.5Bi0.5TiO3 (NBT-KBT) has a very good piezoelectric properties in lead-free piezoelectric material system . At the same time , with the electronic components to the miniaturization of integrated, multi-functional development , new devices require low operating voltage the small piezoelectric thick film interfacial reaction can be achieved . In the various existing piezoelectric thick film preparation method , screen printing method and the casting method is more successful method of piezoelectric thick film was prepared . This thesis, the gel cast molding , and a screen printing method using water based NBT-KBT piezoelectric thick film materials has been studied . Sol - gel prepared NBT-KBT nanopowder . When sol - aging time of 36 h, calcining temperature of 650 ℃, incubated for 2 h, to give a uniform grain distribution , the average grain size of 200 nm NBT-KBT Powder . The course of the reaction of the sol - gel method , heating rate , heat treatment temperature , aging time of the sol - gel prepared NBT-KBT powder particle size . Prepared by solid powder and sol - gel prepared powder were used , NBT-KBT gel tape casting process 300μm thick were prepared thick film . The study found that the powder can lower the sintering temperature and piezoelectric properties of sol - gel prepared . Thick film sintering at 1120 ℃ for 2 h , εr = 919, tan δ = 4.9% ( 1 kHz , 25 ° C) , d33 = 102 pC / N , kt = 20% , Pr = 24μC/cm2 , Ec = 56 kV/cm2 . Mn-doped NBT-KBT thick film printing method , a small amount of manganese doped caused NBT-KBT tetragonal phase transition from the tripartite study of Mn-doped NBT-KBT thick film dielectric , piezoelectric and ferroelectric performance, at a manganese doping amount is 0.5 mol% , the best performance is : εr = 735 , tan δ = 2.2 % (10kHz , 25 ° C ) , D33 = 88 pC / N , Pr = 28μC/cm2 , and Ec = 86 kV/cm2.
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