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Effects of Doping Concentration and Hole Blocking Material on the Performance of Phosphorescent OLEDs
Author: YueXin
Tutor: XuZheng
School: Beijing Jiaotong University
Course: Optical Engineering
Keywords: The organic electroluminescent device Phosphorescence Triplet A hole blocking layer
CLC: TN383.1
Type: Master's thesis
Year: 2009
Downloads: 161
Quote: 0
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Abstract
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Organophosphorus photoelectric electroluminescent devices can make full use of the device within the formation of singlet excitons and triplet excitons with high internal quantum efficiency , therefore , the relative fluorescence device , phosphorescent devices have broader application prospects . Phosphorescent devices exist for the current problem , the paper carried out the following research : Ir (ppy) 3 and Ir (piq) 3 two phosphorescent material prepared phosphorescent device electrically luminescent properties , the analysis of the energy transfer in the polymer doped systems ; electron injection barrier impact on device performance and analysis of the electron injection process that may exist within the device . This paper is divided into five chapters , the first chapter is the research progress and the basic principles of of organic Electrophosphorescence devices , the second chapter focuses on the organic electroluminescent material of phosphorescent devices , preparation and testing methods . Chapters III and IV studies focused on the above aspects , the fifth chapter is the conclusion . (1) This thesis uses the two complexes of iridium as a phosphorescent device doped object studied the photoelectric characteristics of the two types of phosphorescent material , to compare the energy transfer in the polymer doped systems , and analysis of the the main source of the electroluminescent system . (2) on the basis of (1) , Ir (ppy) 3 phosphorescent material as a guest material , PVK doped PBD as the total of the host material , use of different hole blocking layer, prepared the doping concentration groups phosphorescent device. By the electrical properties of the test device , the device may exist in the electron injection mode , by comparing the further study of the influence of the doping concentration and the electron injection method for the efficiency of the device to obtain the photometric efficiency 2.9cd / A phosphorescent device .
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