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Thermal Resistance Analysis and Improvement for Power MOSFET

Author: SunZuoTao
Tutor: ShiYanLing
School: East China Normal University
Course: IC Engineering
Keywords: Power MOSFET ANSYS thermal analysis thermal resistance test method of thermal resistance
CLC: TN386.1
Type: Master's thesis
Year: 2010
Downloads: 189
Quote: 0
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Abstract


With the fast growth of Semiconductor Power Devices and Assembly Industry, Power MOSFET trends towards higher power, smaller, faster, better thermal performance. So the thermal design to improve thermal dissipation performance has been becoming increasingly important. The key method of improving thermal performance is to reduce the thermal resistance. There are many aspects to research high thermal conductive material and assembly structure, physical definitions of different thermal resistance and its test method, and how to improve thermal performance.Based on a lot of bench marks and experiments, the thermal design method has been successfully validated by ANSYS thermal analysis and bench thermal test for prototype samples. Measurement results indicate a great thermal improvement (Rthja reduce 50%, Rthjc reduce 70%) cross to SO-8 standard package and prove the new design and process doable furtherly. TIt can make our SO-8 Power MOSFETs more competitive which is also be a good guide to thermal performance improvement for other packages.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices > Metal - oxide - semiconductor (MOS) devices
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