Dissertation > Excellent graduate degree dissertation topics show

Simulation Research on Novel Trench MOS Pinched-off Schottky Rectifier

Author: LiWeiYi
Tutor: RuGuoPing
School: Fudan University
Course: Microelectronics and Solid State Electronics
Keywords: Schottky barrier diode pinch off effect breakdown power device
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 27
Quote: 0
Read: Download Dissertation

Abstract


Power semiconductor devices and power Integrated Circuit (IC), which are important branches of the whole semiconductor industry, are widely applied to industrial and social utilities. Power rectifier is a vital component of power semiconductor devices. On the basis of traditional P-i-N diode and planar Schottky barrier diode (SBD), several types of non-planar SBD have been designed and fabricated, among which Trench MOS Barrier Schottky rectifier (TMBS) and Graded doping-TMBS (GD-TMBS) successfully improve device characteristics by using depletion region induced by MOS structure to pinch off the conducting channel. However, the high field peak locating at the mesa botton near the trench corner limits the improvement of breakdown voltage for both TMBS and GD-TMBS.Process simulation and device simulation are called in a joint IC-technology computer aided design (IC-TCAD). It is one of the few technologies that are able to shrink the time and cost of IC developing. Besides, IC-TCAD is able to offer information which experiments can not to strengthen the research on IC process and device physics. In this thesis, we use process simulator Csuprem and device simulator Apsys of Crosslight Inc. to simulate planar SBD, TMBS, and GD-TMBS, characteristics of which we have already known. By comparing our simulated results with the known results, the applicability and precision of physic models used in Csuprem and Apsys are verified. The credibility of these simulators is so established.An improved structure over TMBS, Trapezoid Mesa-TMBS (TM-TMBS) is proposed. By simulation several parameters are varied to study their influence on breakdown voltage. Qualitative explanations are given to these relationships, according to which the optimized structure is given. Designing rules are also given to select the optimal value of these parameters. Simulation results demonstrate that optimized TM-TMBS achieves a 6.3% higher breakdown voltage and a 26% lower reverse leakage current compared with TMBS. Although TM-TMBS shows a slightly weaker forward performance, it’s still better than planar SBD.An improved structure over GD-TMBS, GD-Trapezoid Mesa-TMBS (GD-TM-TMBS) is proposed. Following most of the parametric values of 200 V GD-TMBS, we used Apsys to study the influence of mesa bottom angle y and mesa top width a on device characteristics. Qualitative explanations are given to these relationships. It is revealed that only using a trapezoid mesa can not increase the breakdown voltage. The bottleneck is that the mesa bottom is hard to be pinched off. A new doping profile is derivated analytically, fitting the requirement of GD-TM-TMBS. Qualitative analysis demonstrates that this new doping profile is able to overcome the difficulty of pinching off.Another improved structure over TMBS, Round Corner-TMBS (RC-TMBS) is proposed. Electric field distributions of three kinds of RC-TMBS under reverse bias are studied by using Csuprem and Apsys. Physical explanations about the field peak values are given.Ⅰ-Ⅴcharacteristics of these three kinds of RC-TMBS are compared with those of TMBS and TM-TMBS. The optimized Double-RC-TMBS achieves a 2.9% higher breakdown voltage and a 15.5% lower leakage current compared with TMBS. Although the optimized Double-RC-TMBS shows slightly weaker forward performance compared with TMBS, it is still better than TM-TMBS. Physical explanations about the forward performance are given. Double-RC-TMBS can be considered as a eclectic mix of TMBS and TM-TMBS.

Related Dissertations

  1. Study on the Divorce Proceedings Involved with Domestic Violence,D923.9
  2. Design of Solar Energy Collection Heat Control System for Bathing and Detecting Breakdown,TP273
  3. Al Wire Bonding Failure and Automatic Optical Inspection on Power Device Leadframe,TG441
  4. Research on Trigger System of Surface-breakdown High-voltage Switch,TM564
  5. Study on a New Novel Avalanche Photodiode for Suppression of Edge Pre-breakdown,TN364.2
  6. Automotive fuel line non-conductive ESD technology research,U464.136
  7. Monte Carlo simulation cC 4 F 8 and CHF 3 mixed gas discharge characteristics,TM213
  8. Power system capacitor explosion causes of and countermeasures,TM533
  9. Synthetic testing high voltage ignition device development,TM855
  10. Dynamic characteristics of the PIN diode Computer Simulation Analysis and Research,TN312.4
  11. Study on Standardization Scheme of Bill of Quantities System,F284
  12. Based on Genetic Neural Network Laser Induced Breakdown Spectroscopy quantitative elemental analysis techniques,TP183
  13. Employee Performance Appraisal System of Real Estate Company Based on Project Management,F293.33
  14. The Research and Practice of Project Management in Ningbo Electric Power Design Institute,F426.61
  15. Painful choices between the individual and society - On Christa # 8226 ; Wolfe novel \,I516
  16. Study on Properties of Caisson Breakwater as OWC under Irregular Waves,TV139.2
  17. Lead laser ablation pit modeling and single pulse laser-induced breakdown spectroscopy,TN247
  18. Risk identification and response equipment and component upgrade project,F272;F224
  19. Qualitative Analysis of Heavy Metals in Flue Gas by Laser-Induced Breakdown Spectroscopy,X831
  20. Research on Element Analysis of Steel by Laser Induced Breakdown Spectroscopy Technology,TG115.33

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
© 2012 www.DissertationTopic.Net  Mobile