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SOI preparation of the oxygen ion implanted defect in the control and study
Author: LiFengXiang
Tutor: ZhengGuoXiang；CaoLeiJun
School: Fudan University
Course: Materials Engineering
Keywords: SOI SIMOX SIMNOND SMART CUT Cu -plating SECCO
CLC: TN305.3
Type: Master's thesis
Year: 2011
Downloads: 33
Quote: 0
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Abstract
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Insulating material silicon-on- insulator ( SOI : Silicon On Insulator ) with the bulk silicon , compared with the advantages of lower power consumption, higher integration density , reduce process steps , 1V drive and increase the operating speed . Due to the excellent isolation performance of insulating material , the speed can be increased by 20-35 % ; broaden the operating temperature range of the device ; excellent anti-radiation performance ; also reduces the cost of the circuit . SOI technology to achieve a \--- Note oxygen barrier method ( SIMOX ) as the most mature SOI wafer production method , has been widely in the production application , one of the most critical devices is large doses of the large energy beam oxygen ion implantation machine . SIMOX technology lattice defects increase after the injection of the injection process makes use of the ion implanter , SOI wafer yield loss factors . This article focuses on the oxygen ion implantation machine defects generated in the SIMOX technology , its characterization means to control the energy of the injected dose , the beam and the injection temperature is to reduce the number of defects ; process experiments . And draw low dose can cause pinhole defects , high energy can lead to an increase in the number of pinholes and low-temperature injection deficit experimental results , and then for the implanter improvements . Through the paper work on the injection temperature , energy , dose, beam reasonable set has been used in the manufacturing process of the MOS power device , and is used in large-scale production of the company , the good chip yield and economic benefits .
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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > General issues > The semiconductor device manufacturing process and equipment > Doping
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