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Studies on Preparation and Doping Properties of CdTe Nanocrystalline Thin Films Grown on Different Substrates by Low Temperature Sputtering

Author: GuoFuQiang
Tutor: ZhengZuoFeng；JianJiKang
School: Xinjiang University
Course: Materials Physics and Chemistry
Keywords: CdTe nanocrystals film radio-frequency sputtering solution immersion method preferential orientation
CLC: TB383.1
Type: Master's thesis
Year: 2008
Downloads: 141
Quote: 0
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Abstract


In recent years, there is a growing interest in the synthesis of nanometer-sizedⅡ-ⅥBinary semiconductor materials due to Nanocrystalline semiconductor films possess some unique physical properties and promising application.In this paper, two aspects of our work are given in the body of this thesis. First, CdTe nanocrystals films were prepared by low-temperature radio-frequency sputtering method. The influences of various parameters (substrates, deposition time, the environment, pressure, power, etc.) on the produced CdTe nanocrystals film had been discussed in the low-temperature radio-frequency sputtering method. Second, CdTe nanocrystals films were carried on Ag-doping by means of immersing in AgNO3 solution. The influences of various preparation factors such as concentration of solution, dipping time and annealing conditions on the Ag-doped quantity of films and the final films property had been discussed.Based on the analysis and characterization of the crystal structure, morphology and the optical absorbing properties, the following main conclusions have been obtained. For the same the deposition time of 1 h, the CdTe films on glass and Si have higher preferential orientation in the (111) reflection than that of CdTe films on Al2O3; The substrate surface have great impact on the morphology of the films. The glass and silicon substrate with the smooth surface have greater help to growth of the thin films than Al2O3 substrate with the rough surface. And the films deposited on the glass substrate have better optical property. Finally, the Ag-doping in CdTe nanocrystals films can be achieved at the proper conditions such as the concentration of immersion solution, dipping time and annealing condition. The electrical conductivity of the produced films with Ag-doping has been improved.

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