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Growth and Characterization of SiGeC Materials by Ultrahigh Vacuum Chemical Vapor deposition

Author: WangYaDong
Tutor: YeZhiZhen
School: Zhejiang University
Course: Semiconductor materials
Keywords: Ultra - high vacuum CVD Materials and Performance Epitaxial growth SiGeC Silicon germanium carbon Band and strain engineering Alloy materials State Key Laboratory Oxidation Kinetics Strain-relieving
CLC: TN304
Type: Master's thesis
Year: 2001
Downloads: 108
Quote: 0
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Abstract


Ternary Si 1-xy Ge x C y alloy cause of universal attention for its unique properties. The carbon added to the Si-Ge system provides greater flexibility in the energy band and strain engineering. Improved Si 1-x Ge x properties of the materials, there are many applications in microelectronics and optoelectronics. The various properties of this new type of semiconductor material gradually depth discussion: explore diverse from various growth methods (e.g., MBE, RTCVD, SPE) Probe to the growth mechanism; from the strain in the alloy ease the analysis of the role to analyze the impact of the carbon atoms of silicon-germanium alloy band; performance benefits from the analysis of ternary alloys of silicon germanium carbon materials developed silicon germanium carbon materials devices. State Key Laboratory Professor Ye Zhizhen of our silicon materials after returning to MIT, from the United States in 1992, first in the country to open up the ultrahigh vacuum CVD research positions, the establishment of China's first ultra-high vacuum CVD epitaxy system. We summarize the accumulated experience of our group in the past in the preparation of silicon-germanium alloy based on the use of ultra-high vacuum CVD technology successfully prepared ternary alloy of silicon germanium carbon. The paper first summarizes the status of the research silicon germanium carbon auriferous, in brief our laboratory ultrahigh vacuum chemical vapor deposition system and experimental processes, focusing on the experimental results are analyzed and discussed. The main work is as follows: the macroscopic strain of the silicon-germanium-carbon alloy micro-strain. Carbon added in the macro significantly alleviate strain, but there is a large strain remains in the micro; analysis of the thermal stability of the material, the addition of carbon significantly alter the thermal stability of the alloy material, at higher annealing temperatures, due to alternative position carbon precipitation, the material shows the relaxation behavior is different from the silicon-germanium; analysis of the oxidation kinetics of the alloy, the addition of carbon weakened the oxidation rate of the alloy; study the behavior of the alloy oxide Luminescence oxidized samples 383nm near emission band may be due to SiO 2 (GeO 2 ) oxygen vacancy defects caused by the emission peak of 374nm near may be associated with the oxide layer related to the carbon; Finally, a preliminary study of anodized porous silicon germanium carbon. In short, our experimental and theoretical research work has laid a solid foundation for the future development of our devices and industrializing, has important implications for the development of our country in the UHV / CVD technology and microelectronic devices.

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