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Several anomalous relaxation wide band gap semiconductor ( 110 ) surface electronic structure theory

Author: XuXiaoShu
Tutor: HuXing
School: Zhengzhou University
Course: Condensed Matter Physics
Keywords: Surface electronic structure Wide band gap semiconductor Abnormal relaxation Theoretical study Compound Semiconductors Surface relaxation Surface states Ⅲ nitride Electronic states Orbital characteristics
CLC: O472.1
Type: Master's thesis
Year: 2001
Downloads: 78
Quote: 0
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Abstract


This form of scattering theory using the Green's function method and tight-binding nearest neighbor sp ~ 3s ~ * spd model and two in the application has some excellent properties of semiconductor materials abnormal relaxation Ⅲ nitride BN and Ⅰ - Ⅶ family compound CulCl (110) surface electronic structure . Respectively, and the relaxation of the ideal surface of the projection surface band structure and density of states of electron shells . A more detailed discussion of the characteristics of the electronic states before and after relaxation . The results showed that : (1) BN (110) surface electronic structure with most of Ⅲ - Ⅴ and Ⅱ - Ⅵ compound semiconductor ( 110 ) surface electronic structure is qualitatively similar . However, in the surface state energy level position , dispersion characteristics and orbital characteristics , etc. there is a big difference on both . One notable difference is: the relaxed band gap corresponding anion dangling bond surface states , respectively, although the downward and upward movement , but still some in the band gap . This universal \(2) CuCl (110) surface relaxation after a change in the electronic states of the d-state of Cu and Cl p-state re- hybridization played a major role. Surface relaxation is pp, pd hybridization interaction, while most of Ⅲ - Ⅴ and Ⅱ - Ⅵ compound semiconductor ( 110 ) surface relaxation is pp hybridization plays a major role .

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CLC: > Mathematical sciences and chemical > Physics > Semiconductor physics > Semiconductor Properties of > Surface properties
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