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On the Sol-Gel Processing and Mechanism for Antimony-Doped Tin Oxide Conducting Thin Film

Author: DuGang
Tutor: ZhangDaoLi
School: Huazhong University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Antimony doped tin oxide Conductive films Sol - gel method .
CLC: TN304.05
Type: Master's thesis
Year: 2005
Downloads: 390
Quote: 3
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Abstract


Interest of the researchers for the transparent conductive film study has been on the rise since 1907 Bakdeker CdO films by sputtering methods developed various films in recent years have been great application in the industrial field. Explore effective development of new material of the thin film preparation process, especially depth study of the formation mechanism of the film under specific process conditions and the conductive mechanism, not only is the interest in the study, and is driven by the needs of the market. This paper introduces a metal oxide film, especially antimony-doped tin oxide (ATO) films Research and applications. According to the current status of research, combined with ATO conductive film applications demand the sol - gel method using inorganic metal salts of stannous chloride (SnCl2? H2O) and antimony trichloride (SbCl3) as raw material and prepare ATO conductive The film's experimental program. , Respectively, using the X-ray diffraction (XRD) and scanning electron microscopy (SEM), studied the sintering temperature, film thickness and doping concentration on the ATO conductive thin film phase and microstructure of. Clarify the basis of principle in the surface of the glass substrate room temperature sol - gel prepared ATO films and experimental process, summarize the specific parameter values ??of the ATO conductive thin film preparation process. The doping concentration is 10at%, dip coating layer and after sintering at 500 ℃ ATO conductive film, and its sheet resistance is reduced to about 130? Analysis of the formation mechanism of the sol - gel prepared films and conductive mechanism of the film formation process, summarized the formation process of a chemical reaction: the sol preparation of alcohol solution reaction, dip coating hydrolysis and polycondensation the polymerization reaction and drying and heat treatment of the film formation, decomposition and the bonding reaction. ATO Conductive film performance analysis showed moderate doping can improve the conductive properties, Sb introduction of the sheet resistance decreased significantly. When the doping concentration is too large, the dopant ions electrons ionized impurity scattering effect caused by the conductive properties of the ATO film significantly reduced. The SnO2 lattice of oxygen vacancies, the pentavalent Sb impurities on SnO2 forbidden band form the donor level and the conduction band to provide the n-type carrier is ATO Conductive two primary mechanisms. With the increase of the doped antimony concentrations in the antimony doped tin oxide film, the oxidation state of antimony between Sb3, and Sb5 competition exists. On the basis of experimental studies, the combination of tin dioxide lattice model to investigate the mechanism of the ATO conductive film conductive, calculate the theoretical conductivity of the ATO. This theory calculated with reference significance for improving the sol - gel prepared ATO film process.

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