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Deep submicron integrated circuit manufacturing process research and application of the etching mechanism

Author: SunYang
Tutor: LiuRan；LinJunYi
School: Fudan University
Course: Electronics and Communication Engineering
Keywords: Reactive ion etching Shallow trench isolation Self-aligned etching process
CLC: TN405
Type: Master's thesis
Year: 2010
Downloads: 44
Quote: 0
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Abstract


Plasma dry etching is one of the most critical processes in the manufacture of LSI . With the LSI manufacturing toward higher integration , smaller critical dimensions , as well as larger wafer radius direction , process accuracy and repeatability increasingly demanding. In deep sub-micron size conditions , it is necessary to further understand and master of etching mechanisms . In this study, the Shanghai Grace Semiconductor Manufacturing Co., state-of-the-art 8 - inch integrated circuit manufacturing equipment , thesis research and production practice , in order to achieve the purpose of a combination of research . This paper first describes the development and status quo of the etching process . Etching process from wet etching to dry etching ; the etching plasma enhanced etching system , reactive ion etching system gradually developed into a magnetic field enhanced reactive ion etching and inductively coupled plasma system , with an emphasis about the mechanisms and characteristics of reactive ion etching . Etching system and the corresponding process of development to meet the requirements linewidth from sub-micron to deep submicron . Secondly, the most critical in deep submicron integrated circuit manufacturing process of - shallow trench isolation process optimization . Optimization mainly through three trenches dome angle (Top Corner a Rounding , TCR ) , and the second is the inclination angle of the STI trench round the lower corner (Bottom Corner of a Rounding , BCR ) . Through optimization the STI process significantly improves the performance of the device . Finally, studied C5F8/O2/AR/C2H2F2 mixed gaseous under different conditions , the impact of the process of self-aligned coupling holes (SAC) . This article that can improve the traffic through the ratio adjustment C5F8/02 and C2H2F2 Si02 Si3N4 choice than explained , and its mechanism .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Microelectronics, integrated circuit (IC) > General issues > Manufacturing process
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