Dissertation　

About 21 item dissertation in line with Current Collapse query results,the following is 1 to 50(Search took 0.077 seconds)

  1. Study on the AlGaN/GaN MOS-HEMT Device with High-κ Materials as Gate Dielectric,GuoJianPing/Xi'an University of Electronic Science and Technology,0/94
  2. AlGaN/GaN high electron mobility transistor device modeling and characteristic research,PuJinRong/University of Electronic Science and Technology,0/61
  3. Study on TCAD Simulation of AlGaN/GaN High Electron Mobility Transistor,LiuChang/Xi'an University of Electronic Science and Technology,0/221
  4. The Study on the Physical Model and Key Process Technologies of AlGaN/GaN HEMT,LuoQian/University of Electronic Science and Technology,4/1064
  5. Device Physics and Related Experimental Studies of X-band AlGaN/GaN High Electron Mobility Transistors,DuJiangFeng/University of Electronic Science and Technology,0/250
  6. GaN HEMT device equivalent circuit macro model and test analysis,ChenZhaoXiang/University of Electronic Science and Technology,0/205
  7. AlGaN / GaN HEMT current collapse effects test and simulation studies,LuoDaWei/University of Electronic Science and Technology,0/233
  8. AlGaN / GaN HEMT E power amplifier design,ZhuLei/University of Electronic Science and Technology,4/461
  9. The Quantum Phase of Mesoscopic Circuit Driven by a Classical Signal,LiuQing/Jiangxi Normal University,0/19
  10. GaN HEMT current collapse mechanism and experimental study,LongFei/University of Electronic Science and Technology,0/208
  11. AlGaN / GaN HEMT current collapse mechanism of,JinLi/University of Electronic Science and Technology,0/258
  12. Characteristic of AlGaN/GaN Heterostructures and of High Electron Mobility Transistors,XieFeng/Xi'an University of Electronic Science and Technology,0/444
  13. Study on HT Characteristics and Reliability of GaN HEMT,JiangShouGao/Xi'an University of Electronic Science and Technology,1/231
  14. Study on In-Situ Growth of Dielectric MIS-HEMT,HuGuiZhou/Xi'an University of Electronic Science and Technology,1/31
  15. Febrication and Characteristics of Composite-channel High-electron-mobility Transistors,JieLu/Xi'an University of Electronic Science and Technology,0/25
  16. Fabrication and Characterization of Recessed-gate MOS-HEMTs,PanCaiYuan/Xi'an University of Electronic Science and Technology,0/57
  17. The Fabrication and Study of AlGaN/GaN FP-HEMTs,GuoLiangLiang/Xi'an University of Electronic Science and Technology,0/35
  18. AlGaN / GaN FP-HEMTs research,WeiWei/Xi'an University of Electronic Science and Technology,0/42
  19. GaN-based double heterojunction characteristics,ZhengPengTian/Xi'an University of Electronic Science and Technology,2/104
  20. AlGaN / GaN HEMT current collapse experimental study,MaXiangBai/Xi'an University of Electronic Science and Technology,3/50
  21. Study of AlGaN/GaN HEMT Characteristics and Suppressing Current Collapse,YanYu/Xi'an University of Science and Technology,0/51

Total 1 Pages First Previous 1 Next Last

© 2012 www.DissertationTopic.Net  Mobile