MOSFET - Dissertation

About 271 item dissertation in line with MOSFET query results,the following is 1 to 50(Search took 0.049 seconds)

Research on Power MOSFET Model for Reliability Analysis,LiQiuYang/Harbin Institute of Technology,0/76
Power MOSFET Devices Integrated with Schottky Diode Simulation and Research,JiaoWenLi/Harbin Engineering University,0/51
Simulation Research of Gate Enhanced Power UMOSFET with Deep Trench Dielectrics Engineering,LanZuo/Harbin Engineering University,0/11
The Study of New SOI MOSFET Structure and Reliability in Nanometer Scale,CaoLei/Xi'an University of Electronic Science and Technology,0/79
Research on Noise Mechanisms and Modeling for New Types of Microwave Transistors,ChenYongBo/University of Electronic Science and Technology,0/116
High-voltage and High-current Sillicon Carbide MOSFET Series-parallel Connected Module,ChengShiDong/Zhejiang University,0/15
A2-D Semi Analytical Model for Ultra-Short Channel MOSFET Taking into Account the Junctions Depth,HanMingJun/Anhui University,0/3
Eliminating Humidity’s Influence in Lithography Organic BARC Process of Trench MOS,QiuZhiChun/Shanghai Jiaotong University,0/16
Modeling and Evluation of Conducted EMI in SMPS Devices,LiLongTao/Harbin Institute of Technology,0/70
The Designing of High Frequency and High Voltage Square Pulsed Power Based on MOSFET in Series,LiChengZu/Huazhong University of Science and Technology,0/17
Research on SIC MOSFET and its Applications,LuZuoJing/Nanjing University of Aeronautics and Astronautics,0/38
Efficiency Evaluation of Single-Phase SiC PV Inverter,HuGuangZuo/Zhejiang University,0/41
Design and Implementation of Intelligent High Frequency Switching Power Supply Based on DSP,ZhouZePing/Liaoning University of Technology,0/48
Design of Acoustic Positioning Transmitter and Imaging Sonar Transmitter,WangBo/Harbin Engineering University,0/21
Research and design of nanosecond pulse source and the GPS antenna,WuJianXing/University of Electronic Science and Technology,0/38
Design and Research on Gate Drive Optocoupler,MaXing/Xi'an University of Electronic Science and Technology,0/34
Research on Sensitive Characterization of Radiation Degeneration of Electornic Devices,SunPeng/Xi'an University of Electronic Science and Technology,0/6
Research and Fabrication of MOSFET with High-κ Gate Dielectric,JinYingChun/Hubei University,0/16
Low-voltage Low-power Bandgap Reference Research under Nanometer CMOS Process,FengChunYi/University of Electronic Science and Technology,0/20
The Process Research of Wafer Thinning and Backside Metal Deposition,LiuDongSheng/University of Electronic Science and Technology,0/54
Ultra high speed digital framing of the camera shutter control circuit,TangBin/University of Electronic Science and Technology,1/29
Research of Degradation Model and Lifetime Prognosis Method for Power MOSFET,ChenShiJie/Harbin Institute of Technology,0/20
Investigation and Enhancement for Reliability of Power Device-Dmos with Trench Structure,WangZhiZuo/Shanghai Jiaotong University,0/36
Deep Sub-micron RF-CMOS Device Physics and Model Research,ZhengWei/Hangzhou University of Electronic Science and Technology,0/41
The Analysis of Carrier Correlation in Nanoscale MOSFET Based on Shot Noise,JiaXiaoFei/Xi'an University of Electronic Science and Technology,0/11
Study of Mosfets’ Radiation Hardening in the Weak-current-signal Readout Integrated Circuit,LiNianLong/University of Electronic Science and Technology,0/15
The Research on Characterization Method and Process Dependency of GaN MOSFET,WangQingPeng/Dalian University of Technology,0/14
Study of Single Impurity Effects in Nanoscale Double Gate MOSFET Devices,ZhangQingTao/Xi'an University of Electronic Science and Technology,0/17
Study on the Gate Leakage Current of Uitra-thin MOS Devices,HuShiGang/Xi'an University of Electronic Science and Technology,0/178
The Photoelectric Transport Properties Induced by B~+Doping of Nanotube Mosfet,WangJieYin/Donghua University,0/23
Study on Threshold Voltage Models for Silicon-based Ge Channel MOSFET,LiZhi/Xi'an University of Electronic Science and Technology,0/44
Design of20V N-Channel UMOS and Optimization of Its Gate-drain Capacitance,ChenXiaoPei/Southwest Jiaotong University,1/24
Quasi Two-dimensional MOSFET Threshold Voltage Model of Considering the Source and Drain Field,ZhaoYang/Anhui University,0/52
Device Simulation of600V Power VD-MOSFET,XieChengFei/Dalian University of Technology,0/40
The Characteristics Research of Power Umosfet Devices and New Structures Design,ChenLi/Southwest Jiaotong University,0/56
Application and optimization of the trench gate technology MOSFET,FanRangZuo/Fudan University,0/82
Research of Modeling Techniques for Deep-Submicron MOSFETs,MengZuoZuo/East China Normal University,0/72
Research on the Damage Effects of MOSFET Induced by the Intense Electromagnetic Pulse,WangZuo/Xi'an University of Electronic Science and Technology,0/103
Design of Trench Power Mosfet and the Research of Gate Charge,WuZhiMeng/Southwest Jiaotong University,0/90
Study on physical characteristics and model of nano scale multi gate FET,LiPeiCheng/Fudan University,0/88
Analysis and Model Research of40nm MOSFET Variation,LiZuo/East China Normal University,0/114
Model in modeling and Simulation of MOSFET gate,MeiGuangHui/Fudan University,0/153
Research and Implementation of50A High-power Pulse Constant Current Supply,MaTianXiang/Jilin University,0/215
Field effect transistor and InGaAs field effect transistor reliability of tunneling,JiaoGuangFan/Fudan University,0/228
Parameter Extraction and Modeling Techniques for RF and Microwave MOSFETs,ChengJiaLi/East China Normal University,1/320
Investigation on the Influence of Annealing and Surface Treatment on the Performance of IGZO-TFT,ZhangLi/Beijing Jiaotong University,1/277
Simulation study of condensate field effect transistor consists of impurities,Tang/Fudan University,0/12
Preparation and Properties of p-type ZnMgO Films for Device Fabrication and Study on the Surface Treatment of GZO Films,XueYa/Zhejiang University,0/117
CVD Growth and Characterization of4H-SiC Epilayers,YangZuo/Nanjing University,0/154
Properties Investigation and Simulation Analysis of SiC Power Device,LiJunZuo/Beijing University of Chemical Technology,0/275