About 45 item dissertation in line with Phase Change Memory query results,the following is 1 to 50(Search took 0.096 seconds)
- Parallelization of Finite Element Computing in Phase Change Memory Electric-thermal Analysis,ZhouXiaoCong/Huazhong University of Science and Technology,0/7
- Simulation Research on Phase Change Memory Cell,XuYongKang/Huazhong University of Science and Technology,0/4
- Design and Implementation of a PCM File System,ShenHan/Huazhong University of Science and Technology,0/5
- Compilation for Embedded Systems with Non-volatile on-chip Memory,LiQingAn/Wuhan University,0/48
- Investigations on the Memory Properties of Binary Telluride Phase-change Materials,LiRun/Nanjing University,0/4
- Programs Designing Base on Finite Element Method in Three-dimensional Simulation of Electric-thermal for Phase Change Memory,LiHongXing/Huazhong University of Science and Technology,0/12
- Research of High Speed Testing Methods for Phase Change Memory Cells,HuangDongQi/Huazhong University of Science and Technology,0/20
- Implementation of Storage Management Strategy for Hybrid System Based on PCRAM,XieYaXuan/Huazhong University of Science and Technology,0/23
- Design of a High Precision Current Source for Phase Change Memory Measurement,MaCui/Huazhong University of Science and Technology,0/20
- Research of Micro-fabrication and Performance for Asymmetric Phase Change Memory Cells,WenXueZuo/Huazhong University of Science and Technology,0/25
- Energy Reduction Strategy in Hybrid Memory Subsystem,WuDongHong/Shanghai Jiaotong University,0/29
- Research and Design of PCRAM-based Hybrid Storage System,ZhangZhengHai/Huazhong University of Science and Technology,0/39
- Performance Enhancement For Flash Memory Based Storage System,ShiLiang/University of Science and Technology of China,0/68
- Study of the Phase Change Mechanisms in Ge2Sb2Te5Based Phase-Change Memory,LiYiQing/Suzhou University,0/105
- Research on Virtual Machine State Migration and Phase-Change Memory Wear-Leveling Method,DuYuYang/Tsinghua University,0/84
- Research on the Testing Technology for the Testing Chip of Phase Change Random Access Memory,ZhangLe/Huazhong University of Science and Technology,0/40
- Thermal Simulation and Key Technologies of Chemical Mechanical Planarization (CMP) for Phase Change Memory,LiuQiBin/Shanghai Institute of Microsystem and Information Technology Research Institute,3/380
- For phase-change memory chalcogenide compounds and devices,LingYun/Fudan University,3/304
- First-Principles Study of Defect Physics for ZnO and Phase-Change Mechanism for GeSbTe,LiXianBin/Jilin University,1/427
- Resistive memory device and process research,LvHangBing/Fudan University,3/561
- The Circuit Design and Implementation of Phase-Change RAM,ShenJu/Shanghai Institute of Microsystem and Information Technology Research Institute,0/301
- Electrical properties of phase change memory storage performance testing and demonstration system research,LiangShuang/Shanghai Institute of Microsystem and Information Technology Research Institute,1/243
- Design and Simulation of a High Performance Phase Change Memory Cell Based on Ga-SbTe,YinWen/Shanghai Jiaotong University,2/141
- Research on Phase Change Materials,XuJiaQing/Shanghai Institute of Microsystem and Information Technology Research Institute,1/576
- Memory Cell Design and Key Fabrication Technology for Phase Change Memory,XiaJiLin/Shanghai Institute of Microsystem and Information Technology Research Institute,3/319
- Modeling and design of high-density non- volatile storage system,DingYiQing/Fudan University,0/246
- Based on the resistive memory technology solutions for high-density applications,TangLi/Fudan University,1/209
- Phase change the film material Ge_2Sb_2Te_5 the ultrafast dynamics research,KongJie/Qufu Normal University,0/63
- Structure and Electrical Properties of GeSbTe Thin Films for PCRAM Application,LiuWenQiang/Nanjing University,0/94
- Study on Preparation and Properties of Ge2Sb2Te5 Based Phase-change Memory Materials,LinYang/Beijing Nonferrous Metal Research,0/107
- Rapid Suspend and Resume Operating System with PCM Support,GaoShang/Shanghai Jiaotong University,0/40
- Design of Simulation System of Phase Change Random Access Memory Cell,LiLan/Huazhong University of Science and Technology,0/13
- Study on Storage Mechanism and Simulation Technology of Phase Change Random Access Memory,YuanChengWei/Huazhong University of Science and Technology,1/18
- Thermal Analysis and Structure Design of Phase Change Memory,AnPing/Huazhong University of Science and Technology,2/59
- Phase change memory cell structure and technology research,HanWuHao/Huazhong University of Science and Technology,2/50
- Electrical characteristics of phase-change random access memory testing method,ShengJunJie/Huazhong University of Science and Technology,1/40
- Research of Power Consumption Optimization for Phase Chang Memory and Its Application in Multi-bit Storage,ZhouJunQing/Shanghai Jiaotong University,0/48
- Research on Hierarchical Parallel Hybrid Storage System,LiuJinLei/National University of Defense Science and Technology,0/70
- Study of SiN x -Doped SbTe Phase-Change Materials for Phase-Change Random Access Memory,WanZuoJian/Shanghai Jiaotong University,0/35
- A M5 Based Simulation of Hybrid Memory System and Its Application,ZhangHuXing/Shanghai Jiaotong University,0/16
- Full-featured phase-change memory chip design and integrated process of post-,WangJiaHui/Huazhong University of Science and Technology,0/27
- PCI Express interface design of phase change memory card,XuYang/Huazhong University of Science and Technology,0/86
- Investigation of SnTe-Ge2 Sb 2 Te5 and Bi2 Te3 Based Phase-change Materials for Applications of Phase Change Memory,XuJianAn/Shanghai Jiaotong University,0/108
- A New Hybrid Storage System of Pcram and Nand Flash Based on PCIE Interface,ZhongDeZuo/Huazhong University of Science and Technology,0/85
- Research of Testing Methods and Set-up for Phase Change Random Access Memory,ZuoLiWen/Huazhong University of Science and Technology,0/21
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