About 26 item dissertation in line with TCAD query results,the following is 1 to 50(Search took 0.030 seconds)
- Study of Pixel Photosensitive Devices on the CMOS Image Sensor,LiTianZuo/Harbin Engineering University,1/0
- The DFM of Silicon CRD,LuXinCheng/Shandong University,0/34
- Study on Emulation and Process of Si-based High Frequency Field-Effect-Transistor,TianXueDong/University of North,0/46
- Research on Strained Silicon Nano MOS Device,ZhangJie/Xi'an University of Electronic Science and Technology,0/69
- Quantum effects and the structural parameters of the device on the tunneling transistor characteristics,YaoChengJun/Fudan University,0/110
- Study on TCAD Simulation of AlGaN/GaN High Electron Mobility Transistor,LiuChang/Xi'an University of Electronic Science and Technology,0/221
- Research of Electrostatic Discharge Protection in Integrated Circuits,CuiQiang/Zhejiang University,6/663
- Optimize the Structure of a BCD Compatible LDMOS by TCAD Tools,LuZuo/Shanghai Jiaotong University,0/183
- ESD Simulation Technology,HuangDaHai/Zhejiang University,2/322
- Study of Deep Submicron Strained Silicon Devices by Simulation,ShiZuo/Jiangnan University,0/183
- The Research of TCAD for AlGaN/GaN HFET,LiuYan/Shandong University,1/383
- Power Integration with 0.35 -micron BCD process research,ZhangShuai/Fudan University,4/251
- Optimization 0.6um BCD process LDMOS devices,YangHua/Fudan University,1/263
- Research on the Design of New Converter Valve Based on Silicon Carbide,LeiHaiFeng/Beijing Jiaotong University,0/67
- Study on Stress Distribution and Electrical Properties of Strained-Si MOS Devices by Simulation,ZhangQingDong/Jiangnan University,0/80
- Heterogeneous gate device short channel effect of,CaiWeiLi/Xi'an University of Electronic Science and Technology,0/91
- Research of Photoluminescence Characteristic on Semiconductor,RenFengXia/Xi'an University of Electronic Science and Technology,0/122
- Simulation and Research of Electrostatic Discharge Protection in Intergrated Circuit,XieJi/Dalian University of Technology,0/106
- SRAM Single Event Effects Assessment Method,ChenShanQiang/Graduate School, Chinese Academy of Sciences,1/292
- Charge pump measurement methods and the reliability of simulated tunneling transistor,HuangXinYun/Fudan University,0/73
- Study on Characteristics of Fast Recovery Diode and Structure of Buffer Layer,ChenHong/Huazhong University of Science and Technology,2/132
- Research on the Process of SiC SBD and Utilize Silvaco to Simulate Its Characteristic,ZhangShiShi/Liaoning University,0/91
- Non-volatile memory of the physical mechanisms and TCAD simulation,ZhongHao/Anhui University,1/113
- The DFM of Power MOSFET,ZhaoZhiHuan/Shandong University,0/103
- Process and Device Simulation of Image Lag Elimination in 4T Active Pixel,YuJunTing/Tianjin University,0/63
- 4H-SiC power BJT device simulation and Features,LiuRuiQing/Dalian University of Technology,0/55
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