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Design of High Voltage Pulse Power for Anodic Bonding and Study on the Processing Property of Bonding

Author: SongYongGang
Tutor: MengQingSen
School: Taiyuan University of Technology
Course: Materials Processing Engineering
Keywords: Anodic bonding Pulse power Crafts Glass RF magnetron sputtering
CLC: TN86
Type: Master's thesis
Year: 2007
Downloads: 94
Quote: 1
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Abstract


Use anodic bonding (anodic bonding) technology, respectively the anodic bonding of the silicon / borosilicate glass, metal / borosilicate glass test Physico-chemical nature of the bonding process and process characteristics, the use of an optical microscope, SEM , XRD methods such as analysis of the mechanism of the formation of the microstructure and transition zone of the connection interface binding domain. The test pressure (pulse) power supply is designed for exclusive use in the anodic bonding, the introduction of the pulse technique anodic bonding of the bonding process, the power supply system using a high-voltage DC operating circuit, the pulse control circuit, a data acquisition and display unit lines consisting of three parts of the circuit. In the two power output under conditions of constant pressure and pulse voltage, respectively, of glass / silicon anodic bonding experiment and analysis, compared with the constant pressure conditions, in the anodic bonding process, the bonding current peak pulse voltage repeatedly appears to increase the frequency and the role of the peak current and the valid duration, equivalent to many times the specimens were bonded, and thus bonded to the average current, to improve the bonding rate. Together by anodic bonding of the metal borosilicate glass test and the bonded interface microstructure of the sample analyzed: Metals and borosilicate glass having a good connection in the anodic bonding conditions, borosilicate glass and aluminum alloys Kovar in less than 400 ° C to achieve rapid and permanent connection. Temperature, voltage and connection time is a major factor affecting the binding quality; difference in coefficient of thermal expansion between the materials, the connection temperature, the thickness of the metal material are the main factors that affect the residual stress, the higher temperature is conducive to improve the rate of engagement, and excessive easy to produce glass breakdown affecting the quality of the connection. Analysis: borosilicate glass-to-metal connection process is divided into three stages, namely interfacial polarization and electrostatic adsorption stage, the ion mobility and anodic oxidation stage, solid-phase diffusion bonding oxide and transition zone formation stage. Interface static electricity and ion diffusion and migration combination of physical and chemical reactions interface provides the necessary conditions for solid phase diffusion bonding process is an important contribution to the achievement of a permanent connection and connection quality borosilicate glass and aluminum fittings transition zone lateral column crystal oxides on to improve the bonding strength has important significance. RF magnetron sputtering pretreatment process in the the ZrO2 ceramic matrix deposition layer of borosilicate glass film of the pre-prepared by an intermediate layer of conductive ceramic and metal anodic bonding glass film. Tests showed that: the sputtering pressure and RF power are two key factors, the constant power case, the choice of the thickness of the film with the sputtering pressure has a direct relationship between the film thickness also increases with the increase of the sputtering pressure,; sputtering pressure is constant, when the RF power is low, the deposition rate with RF power into a linear relationship, to increase the RF power, argon ionization of an increase in the number of increase in the number of ions bombarding the target, the deposition rate is accelerated, with the power further increases, the deposition rate tends to increase slowly. Film by means of XRD, EDX and SEM analysis showed that the chemical composition of glass target unchanged from suitable as an intermediate layer for anodic bonding of ceramic and metal connections of the necessary preconditions.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Radio equipment,telecommunications equipment > Power supply
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