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The Study of the Anodic Bonding between SiO2-Na2O-AlO Function Glasses and Metals

Author: GuoJinYan
Tutor: MengQingSen
School: Taiyuan University of Technology
Course: Materials Science
Keywords: Anodic bonding Glass Aluminum Pulsating power Sol - gel
CLC: TQ171.1
Type: Master's thesis
Year: 2010
Downloads: 68
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Abstract


The anodic bonding (anodic bonding) technology is a use of electrical and thermal interaction means of connecting metal, semiconductor and ceramic materials commonly used in microelectronic packaging. It has an important position in the field of microelectronics manufacturing. Common anode method equivalent deemed parallel bonding of two or more single layer anodic bonding process, the bonding process under the applied electric field, on both sides of the cathode material occur simultaneously ions migrate to the anode, and The depletion layer formed at the interface, and then reaction of the anode material and effectively together. The preparation can be used for multilayer microelectronic mechanical systems. This article is designed to meet the test process parameters AB-1000 reactor anodic bonding process conditions of anodic bonding technique. The pulse generator modulation circuit, the advantage is to provide a stable high voltage DC voltage can be sustained for a bonded specimen. In this paper, the orthogonal experiment glass - aluminum multilayer wafer the common anode bonding process test, the bonding mechanism and process parameters affect the focus of analysis of the bonding process; using an optical microscope, SEM, XRD, universal tensile testing machine instruments such as analysis of the bonding material bonding interface after binding domain microstructure and bonded specimen mechanical properties, and to explore the mechanism of the formation of the transition zone. The interface microstructure analysis shows that the interface is the essence of ion migration and diffusion, binding region by the glass (ceramic) - diffusion transition layer - metal structure formation, diffusion buffer layer gradient distribution of chemical elements on both sides of the interface. The study concluded that: the anodic bonding of the metal and glass is the oxidation of the diffusion of ions in the bonding process, and at the interface of the fundamental. Bonding process, voltage, temperature is the main factor of the bonding reaction. Interface morphology and EDS analysis shows that obviously the buffer layer at the bonding interface of the metal and glass, the both sides of the interface element at a gradient, the element diffusion obvious signs. Glass - aluminum - glass anodic bond together specimen bonding strength increases with the increase of the temperature and voltage, the fracture occurs at near the interface of the aluminum in the glass substrate, indicating that the bonding strength of the interface is higher than the base material. This article considers the common anode method is a reliable bonding of multilayer chip technology. Sol - gel technology applications form a uniform coating anodic bonding sample and the transition zone at the interface. Anodic bonding through the technology microelectronics components of complex shape.

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CLC: > Industrial Technology > Chemical Industry > Silicate > Glass Industry > Basic theory
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