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Magnetron Sputtering and PECVD Preparation of Thin-Film SiGe-SiO2

Author: WangYan
Tutor: FengKeCheng
School: Changchun University of Science and Technology
Course: Physical Electronics
Keywords: magnetron sputtering PECVD Solar cells Film
CLC: O484.1
Type: Master's thesis
Year: 2011
Downloads: 83
Quote: 0
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Abstract


Summary in recent years, with the development of solar technology, people in their daily life in the solar cell applications more and more widely, but most of the current application is the Silicon cells. And how to increase the solar panels light transmittance, increase the efficiency of the photovoltaic conversion into current research.Silica has a simple structure, stable performance, low cost, but also very suitable for optical anti-reflection coating. Ge absorption than silicon spectrum, the range is wide, refractive index high dispersion small and in the infrared band transmittance is relatively good. So Solar Silicon cell board plating on these two ingredients that can effectively increase the solar panels light transmittance as well as increase its photoelectric conversion efficiency.This article examines the use of magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films. On the preparation of process steps are described, on the probing of the process, on the results of the analysis of the test.This article first introduces the magnetron sputtering and plasma enhanced chemical vapor deposition technology development, elaborated with magnetron sputtering and plasma enhanced chemical vapor deposition SiGe-SiO2 films fundamentals, device structures and the basic process flow, using different experimental parameters for thin film deposition.Experiment with different parameters deposition of SiGe-SiO2 optical antireflection films, x-ray fluorescence spectroscopy (EDX), Fourier Transform infrared spectroscopy (FTIR) and Auger electron spectroscopy (AES), and so on material composition, thickness, and thin film optical transmittance characteristics. Analysis of the background, vacuum, sputtering deposition time pressure, oxygen and compressed air flow experiment parameters and material characteristics.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > Film growth,structure and epitaxy
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