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Magnetron sputtering technique is an efficient thin - film deposition process , in recent years been widely used , nano reportedly LaB6 particles in the near infrared wave has good absorbent , ITO film as a typical transparent conductive material , in the middle infrared the band has a strong light reflection effects in order to integrate the two materials in the infrared band characteristics on a glass substrate by DC magnetron sputtering deposition LaB6/ITO composite films using X-ray diffraction (XRD) , atomic force the film organization annealing and under different sputtering conditions LaB6/ITO structure and optoelectronic properties of microscopes, field emission scanning electron microscopy and other testing equipment changes . LaB6 layer of layer sputtering process with the annealing process LaB6/ITO double-layer film structure by the combined effect of annealing to promote the growth of the crystal orientation of the film ( 222 ) . Sputtering conditions on the growth of the film has a great influence , and sputtering in an argon atmosphere only easy to form an uneven structure joining the bias after film growth is more compact , more complete crystallization , the power is too high or too low, films are prone collapse phenomenon, because there is a larger internal stress inside the film . An island shape , the growth pattern of the thin film growth, the growth process , a \Change an argon gas pressure of the four kinds of process conditions , the substrate bias , the sputtering power, the annealing temperature , and did not get a crystal of LaB6 , XPS La , B, the element does not produce an effective binding , TEM also proved LaB6 amorphous organization upper ITO crystalline . After annealing the film cross - section by the columnar crystals becomes axis crystal lattice constant of 0.3125 nm, the hardness and elastic modulus values ??have also been improved . The sputtering time of 3 minutes, an annealing of the film after changed from amorphous to polycrystalline, optical transmittance , conductive also significantly improved the resistivity can be reduced to a maximum of two orders of magnitude .
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