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Research on Shot Noise and Transport Mechanism for Nanoscale MOSFET

Author: WangZuoZuo
Tutor: DuLei
School: Xi'an University of Electronic Science and Technology
Course: Materials Physics and Chemistry
Keywords: Nano- MOSFET Excess noise Shot noise Quasi- ballistic transport Monte Carlo simulation
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 22
Quote: 0
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Abstract


Experimental measurements and theoretical simulation results show that when the device channel length is reduced to a certain length , the carrier transport mechanism from drift-diffusion to ballistic transport even quasi- ballistic transition , and the device will be the main component of the excess noise from the main changes to the thermal noise to shot noise based. In this paper, in-depth analysis and found that changes in transport mechanisms and kinetics of excess noise component causes changes consistent , depends on the barrier near the source region and the channel resistance of these two limiting factors of competition. MOSFET based on nano- carrier transport physics and thermal noise , shot noise generation mechanism , the paper transport mechanism and the deduced primary ingredient shift excess noise conditions . As the channel length is shortened , the source -drain voltage increases , the gate voltage is reduced and the temperature decreases, the transport mechanism for the transition from the drift-diffusion transport of ballistic transport , excess noise from the thermal noise into the shot noise . In order to predict nano MOSFET current noise , quasi- ballistic nano- MOSFET Based on the current model and the image carrier transport established current noise model . This model and experiment, simulated results. According to the noise model established in this paper is presented based on backscattering coefficient noise test extraction method , to achieve a noise on the characterization of transport information . Finally, transport and noise on the nano MOSFET Monte Carlo simulation study carried out to obtain the transport parameters, current noise and bias voltage , temperature, and source and drain doping concentration.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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