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Array Fabrication of the Titania-based Nano Memory and Mechnism Analysis

Author: SunHe
Tutor: FangLiang
School: National University of Defense Science and Technology
Course: Electronic Science and Technology
Keywords: Nonvolatile memory TiO2 Resistive Switching Unit Bistable Oxygen vacancy
CLC: TP333
Type: Master's thesis
Year: 2010
Downloads: 119
Quote: 0
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Abstract


Currently, a dominant market share in the non-volatile memory is a type of capacitor charge FLASH memory . With the development of microelectronics technology , memory cell size becomes smaller , the storage array integration density is also rising. The FLASH memory cell size is reduced to the order of nanometers , its performance drastically reduced , power consumption is increased dramatically. Therefore, the study superior performance nonvolatile memory imminent , currently binary metal oxides as a storage medium storage technology has a simple structure , low power consumption , good compatibility with CMOS technology , etc., has become a research hotspot. Which has a resistive switching characteristics of titanium oxide resistive random access memory technology is expected to become the next generation non-volatile memory technology, the resistive switching characteristics of bipolar and unipolar divided into two categories , there are high impedance and low-resistance state However, as the storage medium of TiO resistance switching physical mechanism is not clear . This paper was prepared 16 × 16 cross array of resistive switching element based on TiO electrical characteristics and physical mechanism , the main work is as follows : ( a ) introducing the conductance characteristics of the basic physical phenomena and nano- processing on the basis of the basic law , prepared 16 × 16 nano storage arrays , discussion and analysis device during device fabrication process parameters on the electrical characteristics of prototype devices ; ( 2 ) was prepared and tested in the TiO resistance of the switching device , based on the resistance of the switching devices of TiO physical parameters of the device bis the relationship between steady state characteristics , exploration preparation conditions such as the external environment on the device switching characteristics. Wherein the physical parameters include: metal electrode material , the effective cross-sectional area , TiO thickness of the functional layer and the TiO , TiO layer of the oxygen vacancy concentration and distribution ; bistable device comprising: a switch resistance ratio , positive and negative threshold voltage , the number of rewritable , operating current, switching speed and breakdown current . ( 3 ) By introducing resistive switching bistable characteristics and physical mechanism of the basic principles of the model , the analysis and discussion bistable electrical properties of oxygen vacancies to form a conductive channel switch , based on the analysis of the formation of conductive paths and switching unit double steady-state storage characteristics , the establishment of a high-impedance state physical model and analyze electrical negative resistance effect , the calculated effective switching thickness.

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
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