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Investigation of Resistive Untraviolet Photodetector Based on ZnO Nano Structure

Author: ChenChao
Tutor: JiaChong
School: Hefei University of Technology
Course: Materials Physics and Chemistry
Keywords: AgBiS2 ZnO nanocrystals resistive UV photodetector stability
CLC: TN23
Type: Master's thesis
Year: 2014
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Abstract


Zinc oxide (ZnO) is a kind of short wavelength, broadband gap photoelectricmaterial, its advantage of epitaxial growth, low temperature, low cost, being easy toetch and convenient to process.It is widely utilized in areas that light-emittingdiodes (leds), laser, ultraviolet detector.In this paper, the spray pyrolysis method isemployed to synthetize the ZnO nanocrystals and ZnO NCs thin films were prepareddepending on the method of spraying.Finally,the resistive photodetector came toconstruction, and then we systematically studied the connection between theannealing temperature and performance of photodetector(PD). AgBiS2quantumdots (QDs) sensitized ZnO photodetector was also explored by us. The main resultswere listed as follows:1. The PD’s construction of ZnO NCs sensitized AgBiS2(ABS) QDs: Thermaldecomposition of Zn(CH3COO)2was applicated in preparing films of ZnO NCsdeposited on soda-lime glass and its thickness was approximate754nm, wherewe found that the annealing process was the throat of an excellent detectionperformance for ZnO PDs;Hot-spraying method was called out for the hybrid PD thatZnO sensitized mono-dispersed ABS QDs and a fruit was covered up that theperformance of the hybrid PD device depended on the sprayed times of ABS.2. The interface treatment for the hybrid photodetector (PD) that ZnO NCssensitized AgBiS2(ABS) quantum dots (QDs): Ligand-exchange method wasemployed in this chapter for the surface processing to ABS QDs. we found that, aftertreatment, when ABS QDs was sprayed in ZnO PD, the detection ability of thehybrid device intend for an enhancement of two-fold in comparison with ZnO itselfwhich can be attributed to the smoothly transport for photo-generated carriers.3.The stability of nanostructured ZnO sensitized ABS QDs PD: After two cyclesof UV illumination for10min then remaining in the dark for10min,both the rise anddecay processes take on an reversible transformation which proves a stability for thedetection device.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > UV technology and equipment
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