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The Circuit Design and Implementation of the Sense Amplifier in Nano-Crystal Memory

Author: WangFengHu
Tutor: YingJianHua
School: Huazhong University of Science and Technology
Course: Semiconductor chip system design and technology
Keywords: Embedded nanocrystal memory Sense amplifier Reference circuit Level shift circuit
CLC: TP333
Type: Master's thesis
Year: 2010
Downloads: 10
Quote: 0
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Abstract


With the unprecedented development of multimedia electronic devices for industrial control and consumer SOC technology , access to a huge market demand for embedded flash memory as an important part of the SOC . The trend of the shrinking of the feature size of integrated circuit technology makes finding the next generation of flash memory technology became a necessity. The nanocrystal memory (Nano-Crystal Memory, NCM) came into being at the turn of the new and old technology . In addition , in order to reduce power consumption , SOC power supply voltage is getting lower and lower , led to the design of high-speed low - voltage embedded flash memory itself also face many technical problems . Accordingly, in order to better play the advantages of the memory of the nanocrystalline , its peripheral circuit performance is good or bad from the important role. First, the characteristics of nanocrystalline memory system overview describes the differences between the nanocrystal memory and traditional floating gate flash memory , the detailed description of the nanocrystal memory programming , erase and read operations principles and methods and of this thesis, the design of the the nanocrystal memory array structure . Secondly , this paper focuses on the nanocrystalline memory system and circuit discussed . According to the the array storage unit specific electrical characteristics , the system is divided into data channels and programming erase channel two parts , each channel module has been divided and set the indicator parameters of these modules . Memory system submodule circuit design according to the index parameters and simulation results . Finally, consider embedded nanocrystalline memory and peripheral circuit device processing characteristics of the problems encountered in the territory of the placement and routing process and proposed solutions . Shanghai Grace Semiconductor Manufacturing Corporation (GSMC) three aluminum the 0.13μm NCM process and the standard 0.13μm CMOS embedded memory technology , the design of low-voltage high-speed embedded NCM memory system . The system has read , byte by byte programming block erase function , which the bytes read time requirement is less than 100ns , byte programming time is less than 10ms, the block erase time of less than 10ms .

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CLC: > Industrial Technology > Automation technology,computer technology > Computing technology,computer technology > Electronic digital computer (not a continuous role in computer ) > Memory
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