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Fabrication and Characteristics Analysis of Enhancement-mode HEMTs with Thin Barrier

Author: YuHuiYou
Tutor: MaXiaoHua
School: Xi'an University of Electronic Science and Technology
Course: Materials Science
Keywords: AlGaN / GaN Enhanced HEMT Thin barrier F plasma treatment
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 48
Quote: 0
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Abstract


Despite the AlGaN / GaN HEMT device characteristics in high-power microwave made ??great progress, because of the lack of p-type channel AlGaN / GaN HEMTs, similar to the CMOS circuit can not be achieved . Usually AlGaN / GaNHEMTs threshold voltage is dependent on the structural design of the epitaxial layer , such as the size of the Al component , Si doping concentration , AlGaN barrier layer thickness. During the preparation of the device threshold voltage modulation method for enhanced device fabrication and circuit applications bring great convenience. Therefore this paper, the structure of a thin barrier material preparation enhanced devices , combined with the F plasma treatment methods, and achieved satisfactory results. First, the barrier thickness for different devices combine material properties were analyzed. Found that while the thin barrier material 2DEG concentration is low, but a higher mobility and therefore a thin barrier structure has a good DC characteristics of the device , in particular a large transconductance . Enhanced devices for the preparation of the material provides a good foundation. Secondly finished paper thin barrier HEMT F injection enhanced preparation , and enhancement and depletion mode device characteristics do a comparative analysis . F for the plasma treatment is not the device threshold voltage of -1.7V, after plasma treatment device threshold voltage of 1.3V, to achieve enhanced . Found that , compared with the depletion-mode device , enhanced devices have smaller gate leakage current and transconductance but greatly reduced , that is the plasma etching process in damage. To further enhance the enhanced device performance , this paper enhanced and depletion mode devices annealed at different temperatures . Found that after annealing , enhanced device characteristics are greatly improved, but little change in depletion mode device characteristics that annealing may be effective in restoring the enhanced plasma -induced damage to the device . After annealing enhanced devices gate leakage constant , F may be introduced after plasma treatment of the surface layer of an insulating tunneling current can be suppressed .

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