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Controlled Fabrication of SiC Nanoarrays and Their Field Emission Properties

Author: WeiGuang
Tutor: LiuHaiYun
School: Taiyuan University of Technology
Course: Materials Processing Engineering
Keywords: SiC Nanoarray Organic precursor Pyrolysis Field emission
CLC: TB383.1
Type: Master's thesis
Year: 2011
Downloads: 44
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Abstract


SiC Low-dimensional materials are excellent candidates for field emission cathode material, the key and one of the foundations of Controllable Preparation of SiC nano-array. In recent years, the rapid progress of research on SiC Low-dimensional Nanomaterials, however there are a lot of basic research on material preparation, performance R \u0026 D in urgent need of systems research. In this thesis, with the excellent performance of field emission cathode materials research and development-oriented, the proposed SiC single crystal substrate-assisted pyrolysis of organic precursor expectations by two key process parameters in the preparation of SiC nano-array substrate and catalyst to explore SiC nano-array controllable preparation and optimization, and system characterization and analysis of the electron emission characteristics of SiC nano-arrays. The specific work of the paper is as follows: C paper as the substrate, through organic precursor pyrolysis processes, 3C-SiC whiskers were synthesized nanowires, up to tens of micron in length, about a few hundred nm in diameter, growing along the [ 111]. Room temperature ~ 500 ℃ field emission performance testing showed that the turn-on field of SiC nanowires 0.66-1.30 V / μm, the electron emission follow the traditional FN theory. Optimize select substrate control the growth of SiC nano-array: different exposed crystal surface index of SiC single chip has a significant impact on the growth of the SiC nano-arrays; through the hot corrosion treatment SiC single chip, can effectively improve the SiC nano SiC array area of ??the line array density (at least 20 times) and array size (density of 2.4 × 107 / mm2 up to 4 mm2). The field emission performance tests: from room temperature to 300. C, nano field emission obey the traditional FN theory. 400 and 500. C of the electron-emitting is a typical thermal emission. 350 ° C. The electron-emitting behavior of a combination of two types of. SiC nano-array turn-on field work function decreases with increasing temperature. SiC nano-array structure can be achieved by optimizing select the type of catalyst and concentration regulation: SiC nano-arrays only in the catalyst under the conditions of a certain concentration of the growth, and in reasonable concentrations within the range of, the higher the concentration of catalyst, the more beneficial to improve array density. The absence of a catalyst and a higher concentration of catalyst is not conducive to the growth of the array; using Co (NO3) 2, and Au as a catalyst, can be prepared in the single crystal SiC substrate and the SiC nano-array, and Fe salts (e.g. FeCl2 and Fe (NO3) 3 ) ineffective. The thesis work for the growth of its control of the SiC nano-array to provide some basic data and technical guidance, and evaluation in the system's ability to work as a field emission cathode material, and thermoelectric conversion and high current density areas with a more academic value and application prospect.

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