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Preparation and Properties of AIN-based Diluted Magnetic Semiconductors

Author: PanDong
Tutor: WuRong
School: Xinjiang University
Course: Materials Physics and Chemistry
Keywords: RF magnetron sputtering Ni-doped AlN Si-doped AlN Diluted magnetic semiconductor Room-temperature ferromagnetism
CLC: TB383.2
Type: Master's thesis
Year: 2011
Downloads: 52
Quote: 0
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Abstract


Successfully prepared magnetic element Ni - doped AlN diluted magnetic semiconductor thin films by RF magnetron sputtering method . Ni for substituted into the AlN lattice doped film remains hexagonal wurtzite structure . Ferromagnetic film 5 K and room temperature . The saturation magnetization and the coercive force of the thin film with Ni doping amount increases. 5 K and room temperature , Ni doping amount of from 1.9% to 2.6% , the maximum saturation magnetization of the sample were 0.025 and 0.014 emu / g ; maximum coercive force of the samples were 208 and 60 Oe . All doping Curie temperature higher than room temperature and the samples appear glassy ferromagnetic at low temperatures . Ferromagnetic film is not derived from the second ferromagnetic phase , but the intrinsic properties of the film . BMP model can explain the ferromagnetism of Ni-doped AlN films . The use of non-magnetic elements Si doping AlN were successfully prepared Si-doped AlN diluted magnetic semiconductor thin films with room-temperature ferromagnetism . Si atoms successful incorporation of AlN films , the films are hexagonal wurtzite structure along the c-axis preferred orientation . The Si doping amount increases, the crystallization of the film deteriorates . Pure AlN films with anti- magnetic , but the Si-doped AlN thin films with ferromagnetic at room temperature increased with the Si-doped film ferromagnetism enhancement . 11% of the amount of Si -doped AlN film saturation magnetization and coercive force were 3.13 × 10 -6 emu and 110 Oe . The doping amount of Si increases, the film PL spectra of N vacancies and O impurities and other defects caused by the increase in the emission peak . Si non-magnetic elements caused by the Si-doped ferromagnetic at room temperature the magnetic properties of the sample is the intrinsic properties of the material , the defects caused by Si-doped AlN thin film ferromagnetic plays an important role . ˉ 6

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