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Effects of the Interface Modification on the Performance of Organic Field Effect Transistors

Author: ZhengHong
Tutor: ChengXiaoMan
School: Tianjin University of Technology
Course: Condensed Matter Physics
Keywords: Organic FET Interfacial modification The field - effect mobility
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 38
Quote: 0
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Abstract


Organic semiconductor materials as the active layer of organic FET (Organic Field Effect Transistor, OFET), because of its unique advantages, such as low cost, low power consumption, simple process compatible with flexible substrates, large area production, etc., has been widely applied to the RF card, identification card, to areas such as the various sensors, the active driving circuit of a flat panel display, a ring oscillator, and an organic electronic fibers. In OFET, for the way of the improvement of the performance of the device in addition to selecting the appropriate materials, structures, reference is also an important modification layer method, which includes modification of the interface of the insulating layer / organic layer and an organic layer / source drain electrode interface refinements. Therefore, to study the role of the modified layer, is of great significance for improving the OFET performance. This thesis is first of all the different stages of development experienced the OFET in recent decades to the Summary of main application areas of the OFET, and OFET development trend, the problems are summarized. Analyzed commonly OFET device structure and their pros and cons, summarizes the the preparation the OFET needs of a variety of basic material on the working mechanism of the OFET carrier injection and transport theory. Based on the introduction of the modified layer can improve OFET performance against the current the OFET of the development status and existing problems, this paper will examine the content located in the preparation of different interface modification layer OFET devices, various modified layer device performance. Specific research work as follows: (1) of inorganic an SiO 2 as OFET insulating layer, the organic material is polymethyl methacrylate (poly (methyl methacrylate), PMMA) SiO 2 < / sub> modified layer prepared based on pentacene OFET, to study the influence of the concentration of the modified layer of PMMA for the performance of the devices. Compared with the single gate insulating layer of the device, after the insulating layer of PMMA modified device to optimize the contact between the organic semiconductor and the insulating layer interface, and to reduce the gate leakage current. PMMA concentration of 10mg/mL to obtain the highest performance of the device. Modification of the inorganic insulating layer of high dielectric coefficient obtained through the use of thin organic polymer material, the improvement of device performance. (2) using a modification layer of 8 - hydroxyquinoline aluminum (Alq3) as the active layer was prepared to study the influence of the modified layer has a thickness for the performance of the devices based on the C60, OFET devices. With the increase in the thickness of the Alq3 modification layer, improved device performance parameters. 10nm thick Alq3 modified layer, the device in the field effect mobility reaches a maximum of 1.28 x 10 -2 cm 2 / Vs, the threshold voltage decreased to 10V. Device performance improved mainly due to the introduction of modified layer: on the one hand to prevent the diffusion of metal atoms into the organic layer to C60; while on the other hand, may be derived from Al/C60 interface between the channel resistance decreases. (3) the LiF, Alq3 and Alq3/LiF double layer as the active layer of the modified layer, to prepare a different modification layer device based on the C60 OFET of FET performance. With than unadorned layer device, after the modified device performance has a certain improvement, wherein to Alq3/LiF for dual-modified layer of the mobility of the device field effect reached its maximum value, 1.6 × 10 -2 cm 2 / Vs. Analysis showed that according to Thermokinetics response relationship, the synergy between Alq3/LiF cause contact of the electrode and the active layer, the barrier reduces the reasons for the improvement of device performance.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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