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Silica film and its light-emitting properties of nanocrystalline silicon mosaic

Author: FangFang
Tutor: WuJiaDa
School: Fudan University
Course: Optics
Keywords: Nanocrystalline silicon Photoluminescence Quantum confinement effect Pulsed laser deposition Thermal annealing Plasma Spectrometry
CLC: O484.41
Type: Master's thesis
Year: 2009
Downloads: 82
Quote: 3
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Abstract


Improve the luminous efficiency of the silicon is the basis of the development of the silicon optoelectronic devices, the silicon-based optoelectronic integrated. Build nanostructures is an effective way to improve the efficiency of silicon light-emitting nanocrystalline silicon embedded in a specific matrix has a good performance of light-emitting, nanocrystalline silicon inlaid silica film is a promising silicon-based light-emitting materials, With an optical energy gap width, strong photoluminescence and electroluminescence, a good light and heat stability, etc.. In this thesis nanocrystalline silicon the inlaid silica film study, a of Nanocrystalline silicon inlaid silica film preparation process, structure and luminescence properties. Reactive pulsed laser deposition (reactive pulsed laser deposition., RPLD) method, followed by high-temperature annealing successfully prepared nanocrystalline silicon inlaid silica film characteristics observed strong nanocrystalline silicon at room temperature photoluminescence. The average diameter of the nanocrystalline silicon is about 5 nm. Testing the combined structural characterization of the samples and features, we focus on effects of thin film deposition O 2 pressure and annealing temperature on the film structure and luminescence properties, and to explore the the material growth mechanism and luminescence mechanism. The results show that that the the appropriate O 2 air pressure and annealing temperature is an important condition for the preparation of highly efficient light-emitting nanocrystalline silicon inlaid silica film, -0.7 Pa O 2 atmospheric pressure deposition film by annealing at 1100 ℃ after emitting the strongest. Plasma through time and space-resolved spectral measurement investigated in the evolution of the 2 atmosphere, a silicon laser ablation plasma in the vacuum and O of silicon oxide film (SiO , x ) of the deposition process. Plasma spectra time evolution and spatial distribution display plasma under vacuum conditions for the free expansion, over time, the plasma density and the luminance gradually decreases; the once introduced O 2 gas, such as silicon ions body in space transport processes in the background gas particles collide excited solutions from background O 2 gas. The expansion of the reactive silicon plasma in a reactive oxygen atmosphere is conducive to the reaction bonding of silicon and oxygen, thereby effectively deposition SiO x thin film having a higher oxygen content. The paper also attempts to double target with dual laser ablation deposition method followed by high-temperature annealing Preparation of nanocrystalline silicon inlaid silica film and the observed strong nanocrystalline silicon photoluminescence at room temperature. Unlike the previous method of preparation, this method using a two-beam laser ablating the silicon target and the silica target at the same time, the resulting two plasma expands toward the substrate at the same time deposition of silicon nanoparticles mosaic silica film, high temperature annealing making the original crystal formation of nanocrystalline silicon nanoparticles embedded in silica matrix film silicon and nanocrystalline silicon inlaid silica film. Experimental results show that the material prepared by this method satisfied the crystalline silicon grain size is smaller, the higher the degree of crystallization.

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CLC: > Mathematical sciences and chemical > Physics > Solid State Physics > Thin Film Physics > The nature of the films > Optical Properties
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