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The Experimental Research of Organic Film Schottky Diode

Author: ZhangJian
Tutor: WangDongXing
School: Harbin University of Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: organic semiconductor organic schottky diode organic photovoltaic cells
CLC: TN31
Type: Master's thesis
Year: 2009
Downloads: 125
Quote: 1
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Abstract


With the development of electronic industry, a variety of electronic devices plays more and more important role in people’s everyday life. Semiconductor devices are important components in electronics products. The electric properties of semiconductor devices affect the function of the products. Traditional semiconductor devices are made of inorganic semiconductor material, of which silicon is the most common, although they have excellent electronic properties, their price is high, preparation process is complex. In recent years, organic semiconductor devices which composed of organic materials experienced a rapid development, preparation processes of organic semiconductor devices are simple, and low cost, which reduce the cost of electronic products, the study on the organic semiconductor components made of organic semiconductor material has attracted much attention, and organic components have been applied successfully in many fields such as display driving and so on.Schottky barrier diode (SBD) is based on rectification characteristics of metal-semiconductor contact. Comparing with P-N junction, SBD is a majority carrier device. It has low break-over voltage,and can be used at high frequency. Although organic SBD is a simple organic semiconductor device, the research of it has actual meanings, the preparation refer to Ohmic contact and Schottky contact which play key roles in preparation of other metal-semiconductor devices, and throughout testing device we could know the electronic characteristics of organic materials, and in addition, organic film SBD has photovoltaic characteristics, this device is the most basic photovoltaic cells.In this thesis, an effective preparation method is proposed for a type of organic/metal Schottky diode. A metal electrode Al, an organic film CuPc, and a metal electrode Cu are deposited on the glass respectively with a simple vacuum evaporation technology. The I-V properties of the diode measured at room temperature, we get the commutating coefficient of the devices. According to standard Schottky theory and the capacitance-voltage, we can conclude that the organic Schottky potential and the carrier concentration. And we also test the photovoltaic effect of the device which has commutating characteristics.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode
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