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Surface acoustic wave (Surface acoustic wave, SAW) technology is an emerging high-tech , developed in the late 1960s and it is an interdisciplinary combination of acoustics, optics and electronics . h-BN belongs to the hexagonal system , is a high performance , great development potential and broad prospect of new broadband semiconductor material with high acoustic transmission rate and excellent optical properties and therefore can be used as a suitable piezoelectric film SAW devices . Accordingly proposed a multi - layer film structure of \In this paper, the RF magnetron sputtering deposition by varying the process parameters on the silicon substrate and the diamond substrate range of boron nitride films using Fourier transform infrared spectroscopy (FTIR) and scanning electron microscopy ( SEM ) analysis of film structural properties. The experimental results show that : the deposition of thin films are of hexagonal boron nitride film ; substrate temperature about 400 ℃ , too low or too high is not conducive to the deposition of h-BN ; between the sputtering power :200-240W power is too small, the film deposition speed is slow and is too large will cause the reverse sputtering , not conducive to the formation of the film ; substrate bias of about 100V , the bias voltage is too small , the deposition speed is slow , and not conducive to improve the purity of the film , and the bias is too large, resulting in energetic particle bombardment of the surface of the substrate under film formation is too strong , resulting in the reverse sputtering , and is not conducive to the formation of a film ; working pressure to 1.2 Pa to 1.6 Pa , in this range , not only the thin film deposition the speed of the ideal , but to make the film was a two - dimensional growth , and help to reduce surface roughness ; the nitrogen argon ratio of 9:3 , the nitrogen content of 20% to 25% is the most conducive to the formation of h-BN films . Films were FTIR and SEM analysis found : h- BN film of the particles is relatively uniform , and relatively flat surface , it is possible into a piece and compact the surface of the adhesion of the diamond film on the diamond substrate , and therefore, deposition of a hexagonal nitride the boron thin film multi - layer film structure, forming a \
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