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Flash (Flash Memory) to store data and applications as components, now widely used in mobile phones, memory cards, industrial equipment, and digital products. In 1984, Toshiba's inventor Fujio Masuoka first proposed a fast flash memory (here referred to flash) concept. Flash memory is a nonvolatile characteristics, and its recording speed is very fast, and can reach 1 million times the erase, save the data for 10 years. NOR and NAND flash memory can be divided into two kinds. NOR used for application storage, mobile phones, automotive electronics, network equipment and other often applied to it. The NAND is often used, such as SD, USB Sticks, etc. on the memory card. With technology development, NOR Flash has entered 45nnm from the original 65nm era, as the industry's first 45nm NOR Flash, to complete the production verification must face many new challenges. From the initial to the end can be mass produced immature, it is essential that various modifications between the work. There are many ways to improve, and failure analysis is one of the very effective means. Simultaneously achieve large-scale production of the product after the failure analysis process is still the primary means of customer returns defective, continuous improvement in order to meet the requirement to provide the technical support. Product verification before production scale generally follow this steps: first set the quality and reliability goals, collecting data, through the failure of product research, will study the results back to the FAB upstream sector, formulate corresponding measures to improve product quality and reliability, and ultimately achieve the set goals, make mass production possible. Paper is divided into four chapters, first introduced the basic working principle of NOR Flash and a new 45nm process and bring change. Followed by 45nm NOR Flash achieve mass production before the validation of the analytical process of failure, failure analysis shows how the basic principles on the use of new technology to solve the production-proven three problems encountered in the process: Screening Liang low quality verification DPM (per one million chips in the number of failures), and packaging of high reliability verification has lapsed chip. By means of failure analysis, and ultimately for all types of problems were found reasons for failure of the chip and the corresponding solutions. After implementation of the solution, through the final data collection proved the effectiveness of these methods, the product in terms of yield, quality, and reliability requirements are met, to the scale of the conditions of production.
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