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PMMA dielectric layer indium zinc oxide thin film transistors and Research

Author: FengJiaHan
Tutor: ZhangQun
School: Fudan University
Course: Physical Electronics
Keywords: Indium zinc oxide DC magnetron sputtering PMMA dielectric layer Dip-coating method A thin film transistor
CLC: TN321.5
Type: Master's thesis
Year: 2011
Downloads: 191
Quote: 0
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Abstract


This low-temperature preparation of indium zinc oxide (IZO) as a channel layer, a polymethyl methacrylate (PMMA) as the dielectric layer thin film transistors. By a DC magnetron reactive sputtering deposition of inorganic IZO channel layer dip prepared organic PMMA dielectric layer, vacuum thermal evaporation deposition of metallic aluminum electrode. Overall the process temperature is lower than 90 ℃, is compatible with the flexible electronics. Respectively, the channel layer, a dielectric layer monolayer film surface morphology, optical and electrical properties were characterized. PMMA dielectric layer / IZO channel layer, the two thin films having high transmittance in the visible region at an average 90% (excluding the substrate). The thickness of the channel layer, the oxygen partial pressure sputtering target material composition, the dielectric layer thickness on the indium zinc oxide thin film transistor (IZO-TFT) performance, optimization of experimental parameters to improve device performance. Exploratory study of the TFT device stability and low temperature preparation of transparent electrodes. Reacted at room temperature by DC magnetron sputtering In / Zn alloy target is deposited on the glass substrate IZO channel layer. Prepared as amorphous IZO film, surface roughness, average transmittance of the visible light region is higher than 85% (excluding the substrate). Including the thickness of the channel layer, the oxygen partial pressure sputtering, target component content of experimental parameters including the IZO-TFT electrical performance impact. IZO having a thickness of 60 ~ 90 nm prepared at optimum device performance. Sputtering oxygen partial pressure of 5.0 × 10-2Pa been prepared at the highest saturation mobility IZO-TFT, values ??are 7.67cm2V-1s-1, the threshold voltage of -14.59 V, switching over 2.4 × 102. Target the appropriate increase in the Zn content will help improve the TFT saturation mobility, while a slight increase in off-state current. Using the dip method IZO channel layer PMMA dielectric layer on preparing organic. PMMA film surface is very smooth, visible transmittance of 92% average (excluding base). Preparation of AI-PMMA-A1 of MIM structure, tests show that the dielectric properties of PMMA film good, 1 kHz when the relative dielectric constant of 3.49. With PMMA dielectric layer thickness in the range of 150 ~ 580 nm increases, TFT saturation mobility and threshold voltages are first increases and then decreases phenomenon. Adjusting the thickness of the dielectric layer of about 360 nm prepared IZO-TFT optimum electrical characteristics, the saturation mobility 1.99 cm2V-1s-1, the threshold voltage of -2.77 V, current ratio of about 2.6 × 104. IZO-TFT by applying a fixed gate bias of time, the aging process of the device saturation mobility, threshold voltage excursion to determine its electrical stability. Appropriate smaller first gate bias voltage is applied for a certain time to help to improve the aging stability of the device. Explore cryogenic preparation suitable for use as a transparent conductive oxide film electrode. At room temperature using reactive magnetron sputtering of amorphous tungsten doped indium oxide (IWO) film, adjusting the oxygen partial pressure of the sputtering power to increase its conductivity and transparency. Doped tungsten content of 1 wt% up to a minimum IWO film sheet resistance of 5.75 × 10-4Ω · cm, average transmittance of the visible light region is higher than 90%.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor ) > Transistor: according to the process > Thin-film transistor
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