Dissertation > Excellent graduate degree dissertation topics show

New SOI-LDMOS structure design and research

Author: LinMinZhi
Tutor: WangPengFei；ChenMing
School: Fudan University
Course: IC Engineering
Keywords: Partial SOI Trench Gate LDMOS
CLC: TN386
Type: Master's thesis
Year: 2011
Downloads: 89
Quote: 0
Read: Download Dissertation

Abstract


The Radio-Frequency power device is a very important element for wireless communication technology. The RF power LDMOS is widely used in high-gain and narrow-band for wireless communication. As a very successful RF power device, it has many advantages. But, as a RF device, its parasitic capacitance will impact many output characteristic such as power gain and make the output match more difficult. The SOI structure can solve the problem. But, the SOI device have defects, the power consumption and the rejection of heat in the active state of device are big problems. As a power device, the self-heating is more severe.So, in this paper, after the research of the structural parameter and the electricity feature, the author proposes a new structure:TG-PSOILDMOS(Trench Gate-Partial Silicon on Insulator LDMOS)In order to make the horizon channel vertical and let the distribution of current density inside the device more uniform, we take the trench gate. By using this structure, we reduce the device area and the cost. We use the Partial-SOI to supply a heat-transfer passage between the device and the substrate, make the heat elimination more convenience. In the end, we add a process step to reduce the capacitance between the gate and drain. So, we consider the effect of structural parameter about the breakdown voltage and the capacitance, then find the optimized structural parameters. The results are:we reduce 8% length of the device, increase the breakdown voltage by about 33% and take a good frequency performance.

Related Dissertations

  1. S-Band RF Power Amplifier Design Method,TN722.75
  2. Single-chip power management chip design,TN86
  3. The Characteristics Research of Noval Power UMOSFET Devices,TN386
  4. LDMOS Wideband Microwave Power Amplifier Design,TN722.75
  5. Study on the Current Model for Lateral Gradual Doping Channel in LDMOS,TN386
  6. Monolithic smart power IC power tubes and enable circuit design,TN386
  7. Study and Design of DRTG-LDMOS Radio Frequency Power Amplifier,TN722.75
  8. New LDMOS -based ultra-thin epitaxial process design,TN386
  9. Half-bridge driver circuit analysis and design of the sub - module,TN432
  10. New media field enhancement SOI high voltage device,TN386
  11. High voltage FET modeling program,TN386
  12. The Research of LDMOS Microwave Wideband Power Amplifier in L-Band,TN722.75
  13. Design of a High-speed and High-Voltage Half-bridge Driver Circuit,TN432
  14. Optimize the Structure of a BCD Compatible LDMOS by TCAD Tools,TN386
  15. SOI-LDMOS device structure design,TN386
  16. Breakdown Voltage and ESD Protection of RF-LDMOS,TN386
  17. Based on the high voltage MOS power device integrated circuit research,TN432
  18. CMOS voltage regulator automotive electronics,TP214
  19. High voltage power device structure design and its electrostatic protection,TN386
  20. The effective role of the curvature effect on the breakdown voltage of the PN junction,TN386

CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
© 2012 www.DissertationTopic.Net  Mobile