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VDMOSE is a vertical double-diffused - oxide semiconductor field effect transistor , VDMOS both bipolar and MOS devices ordinary advantages of both switching applications or linear applications , VDMOS are ideal devices . VDMOSFET already is a representative of the third generation power electronics products , which is characterized by high input impedance, low drive power , fast switching speed , excellent frequency characteristics , and good thermal stability, widely used in automotive electronics, motor driving , industrial control, motor control , switching power supply , energy saving lamps , inverters audio amplifier , high-frequency oscillator , uninterruptible power supplies. VDMOSEFET since the emergence of various aspects of device performance and process has a significant development in the international and domestic demand is on the increase in long -term market share is still very large. VDMOS products in China needs to import more than 90% , so the VDMOS device and electrical properties of the physical characteristics of the design and study has important practical significance. Its appearance is the inevitable development of the device , VDMOS various device structures are the advantages of the previous structure combination. Then the operating characteristics of the MOS device comparison, VDMOSFET working principle and characteristics are described in detail , for VDMOSFET vertical structure , horizontal structures, pressure VDMOS pipe works, characteristic curves , electrical parameters , etc. were introduced , and the right its technical features and advantages are summarized , and of the power and the general VDMOSFET various electrical parameters of MOS devices were compared to optimize the pressure VDMOS -resistance of the structural parameters and characteristics VDMOSFET -resistance between was analyzed, the window area size LW polysilicon and polycrystalline area size ratio LP design optimization , the gate oxide thickness Tox of the characteristics of the device on-resistance of the N-channel Rona a P- body diffusion VDMOSFET junction depth Xjp- were the focus of discussion VDMOS high voltage terminal technology, a detailed description of the terminal structure of the metal field plate , field limiting ring , ring the terminal off the structure and principles . In this thesis, high voltage (100V) power VDMOSFET carried out design of the device is designed cell size calculated through a lot of the various parameters of the device layout software with L-EDIT drawn . By SILVACO software of the device was simulated results fully in line with actual requirements.
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