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Simulation Study of 4H-SiC Tunneling Emitter Bipolar Junction Transistors

Author: LiuZuo
Tutor: ZhangYuMing
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: SiC Tunneling junction Tunneling bipolar transistor Current gain AC small signal
CLC: TN322.8
Type: Master's thesis
Year: 2010
Downloads: 39
Quote: 0
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Abstract


Its wide band gap , high critical field strength , high thermal conductivity , high critical displacement , high carrier saturation drift rate excellent physical properties and electrical properties become the Si, Ge, GaAs after new silicon carbide (SiC) generation of microelectronic devices and circuits , semiconductor materials , materials to SiC bipolar devices increased emphasis . This paper presents a new tunneling bipolar transistor ( TEBT ) the superior characteristics of 4H-SiC material and the basic structure of the NPN bipolar transistor , the emitter junction of the NPN bipolar transistor replaced the MIS structure , and its basic characteristics simulation and analysis : Firstly, the emitter junction metal - oxide - semiconductor structure , the carrier transport mechanism was analyzed. Establish a corresponding model in the software simulation study of the forward and reverse characteristics , and laid the foundation for the study of tunneling bipolar transistor (TEBT) . Secondly, the establishment of the ISE TCAD software suitable device structures and physical models , found that the device has a good DC characteristics , common emitter current gain up to 45 analog DC characteristics of tunneling bipolar transistor . Based on this , further study the influence of the DC gain of the device number of factors : the thickness of the base region and the base region doping is an important factor affecting the DC gain , with the thickness of the base region , the base region doping increases , the DC gain with the decrease , but for the actual device , while reducing the thickness of the base region and doped also bring the negative effect of the device breakdown voltage is lowered, the base resistance increases , so the optimization of the entire device structure parameter , according to the trade-offs ; Finally, the current gain of the device degradation over time , with a simple theory to explain the stacking defects of current transport . The two-port network analysis and parameter model AC small signal characteristics of TEBT analog devices exchange characteristics parameters are extracted . The discovery of the structure of the device is its characteristic frequency f T and maximum oscillation frequency f max compared to ordinary devices are greatly improved . AC characteristics found by simulating the structure of the device is superior . The work create device models , the basic characteristics simulation study of 4H-SiC TEBT provide some theoretical basis , and laid the foundation for further experiments .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor transistor ( transistor ) > Transistors: Performance points > Bipolar transistor
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