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Study of High-k HfO2/SiO2 MOS Device Properties

Author: LiuFangFang
Tutor: LiuHongXia
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: Nano - MOS devices High - k dielectrics Hafnia Stack structure
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 148
Quote: 0
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Abstract


45nm or smaller process nodes , the traditional SiO 2 < / sub > media thickness of the gate oxide layer has thinned to the atomic scale range , the electronic direct tunneling effect will result in the leakage current of the gate dielectric increases sharply device reliability decreases . This is a serious impediment to the diminishing trend of the size of the device in accordance with Moore's Law . Metal gate / high-k gate dielectric material is a combination of the MOSFET to replace traditional polysilicon gate / SiO 2 combination , has become one of the effective methods to solve these problems . Firstly, in - depth analysis of conventional polysilicon gate / SiO 2 < / sub > gate dielectric devices are facing problems , pursuant to which alternative to traditional polysilicon gate / SiO 2 gate dielectric devices metal gate / high-k stack structure devices , and discuss the choice of a new high-k gate dielectric and metal gate . The introduction of new materials HfO need library of simulation software ISE-TCAD material 2 Analog Devices model need to add in-depth analysis , further optimization of device model parameters . Simulation metal gate / high-k the operating characteristics of the stacked devices , the conduction mechanism of the leakage current of the thin oxide layer ; has an important significance in the improvement of the breakdown characteristics of defects simulation , simulation study showed that the defect density does not exceed 1012cm -2 device can keep the good characteristics . On this basis , we also analyze the possibility of gate dielectric breakdown model . MOSFET has the advantages of metal gate / high-k gate dielectric material combinations , which replaces the traditional polysilicon gate / SiO 2 combination will become the future trend of the times .

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