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The Study of the Scaling Laws of GaN Based HEMT Devices

Author: XuChao
Tutor: HaoYue
School: Xi'an University of Electronic Science and Technology
Course: Microelectronics and Solid State Electronics
Keywords: GaN-based heterostructure 2DEG polarization effects GaN-based HEMT scaling down
CLC: TN386
Type: Master's thesis
Year: 2010
Downloads: 95
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Abstract


GaN-based HEMT devices have demonstrated excellent microwave power performance, but not yet commercialized. The ostensible reasons are the small size and high cost of GaN wafer、the lack of difference of the device processes and material growth、the inferiors stability of the devices and so on. The deep-seated reason is a large number of issues of the basic mechanism are still not understood. The study of domestic GaN materials and devices fall behind the abroad. The research of the theory and mechanism are drawing overstep innovative.This paper have research on the quantum of charge carrier distribution and migration rates of the GaN-based heterojunction 2DEG and also carry out preliminary study and analysis on the two-dimensional GaN-based HEMT device simulation and device scaling issues. The main research work and results are as follow: 1. Study the polarization of GaN-based heterojunction effect in the role of the structures of GaN-based HEMT.2. Study the GaN-based heterojunction 2DEG mobility with the variation of structural parameters and reveal the effect of the various kinds of mechanisms. 3. Determine the simulation model of device and the the basic setting method of the structure through a large number of attempts in the two-dimensional simulation on GaN-based HEMT devices. Analyze the changes in the structure of the device in the effect of DC and AC small-signal characteristics.4. Study the scaling law of the GaN-based HEMT device though the simulation. Mainly relating to the changes of the size of gate length、barrier layer thickness and Al composition in the effect of the performance of the device. Eventually reach a the initial law and verify by actual data.In summary, this paper successfully establish the GaN-based HEMT simulation model and explore the two-dimensional simulation model and setting methods of the structure of the GaN-based HEMT device. In the the large number of foundamental issues in the polarization engineering of GaN-based heterojunction and the relationship between 2DEG mobility and structural parameters, the numerical simulation and modeling methods are quantitative theoretical analysised. Finally though the datas verified by simulation, the initial scaling laws of device are obtained.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Field-effect devices
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