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Study on 808nm High Power Vertical Cavity Surface Emitting Laser Array

Author: YangKai
Tutor: ZhongJingChang
School: Changchun University of Science and Technology
Course: Optical Engineering
Keywords: Vertical Cavity Surface Emitting Laser array Selective Oxidation Photoetching Technique DBR array-fabrication
CLC: TN248.4
Type: Master's thesis
Year: 2008
Downloads: 146
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Abstract


The vertical cavity surface emitting laser（VCSEL） have made good progress. VCSEL have distinct advantages over conventional edge emitting lasers, such as small divergence angle, single longitudinal mode operation and very low threshold current. They are especially suitable for making two-dimensional arrays as well as VCSELs based integrated devices. VCSEL are attractive light source for various applications including optical message processing, optical interconnection, and optical calculation. At the same time, the VCSEL is also widely used ordnance industry. Many researcher think that the large scale VCSEL array can be used pump the solid-state laser such as Nd:YAG, Nd:YV04 and so on. It will change the use of VCSEL from the functional devices to the powerful devices.The VCSEL elementary theory has been elaborated, the thermal interaction among single devices in the array have been analyzed. The idea of the thermal interaction caused from the diffusion of heat current is proposed. We have studied the critical technology for fabrication of VCSELs. We studied on the optical etching technique and the wet etching technology, we got the good formula for the etching liquid and the good etching temperature the etching depth and the surface quality after etching can be easily controlled. We studied the wet and selective oxidation, theoretic and experimental investigation has been made on how AlAs or AlxGa1-xAs be oxided in high temperature water vaper, good conditions for oxidation has been gained. After the study on the alloy technology, we got the good alloy conditions.In order to make reflector DBR gain the lower series resistor, we adopt semiconductor/superlattice structure reflector to insteade of the refractive index GaAs semiconductor reflector in the primary semiconductor/semiconductor structure. It forms a pair of the semiconductor and superlattice reflector.By using wet etching and selective oxidation process we fabricated 808nm high power VCSELs. The room temperature CW and pulse operation has been achieved. The maximum of output optical power is 0.6W.

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Photonics technology,laser technology > Laser technology, the maser > Laser > Semiconductor lasers
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