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SiGe fast switching power diode device simulation and analysis

Author: ChenBoTao
Tutor: GaoYong
School: Xi'an University of Technology
Course: Microelectronics and Solid State Electronics
Keywords: SiGe / Si heterostructures On-state voltage drop Stored charge Reverse Recovery
CLC: TN313.6
Type: Master's thesis
Year: 2002
Downloads: 144
Quote: 1
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Abstract


With the power electronics applications in depth, especially in the main switching device operating frequency continues to increase, the performance of the power diode put forward higher requirements, silicon PiN diode over the years has been playing an important role in this regard . However, the switching losses increase with increasing switching frequency, so had lifetime control technique used ( mixed with gold, platinum and radiation , etc. ) to reduce the lifetime of minority carriers thereby reducing switching loss . However, the minority carrier lifetime control technology to reduce storage charge (Q_s) , but also increases the forward on-state voltage drop (V_f) and reverse leakage current (I_r); difficult to achieve Q_s-V_f-I_r three good the trade-off relationship . SiGe material and Si / SiGe heterojunction technology has changed this situation. This article will SiGe technology for improved power semiconductor device characteristics , proposed new P ~ (SiGe)-n ~-n ~ switching power heterojunction diode structure . In analyzing device structure mechanism is established based on the device's computer simulation model with MEDICI simulation of the device static characteristics and dynamic characteristics and temperature characteristics , and for the SiGe layer thickness , SiGe layer Ge molar content and n ~ - zone thickness and other key parameters were optimized . The results show that , P ~ (SiGe)-n ~ - n ~ heterojunction switching power diode with a low forward voltage drop , less stored charge , fast and soft reverse recovery characteristics, and its performance is far the same type of structure than Si ; optimized design , that the SiGe layer of 20nm thickness , 20% of the molar content of Ge , 10μm of n ~ - region thickness of the P ~ (SiGe)-n ~ - n ~ switching Power heterojunction diode device optimal performance .

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CLC: > Industrial Technology > Radio electronics, telecommunications technology > Semiconductor technology > Semiconductor diode > Diodes: the role of sub- > Switching Diodes
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